Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film

2013 ◽  
Vol 102 (24) ◽  
pp. 243501 ◽  
Author(s):  
Mandar M. Shirolkar ◽  
Changshan Hao ◽  
Shiliu Yin ◽  
Ming Li ◽  
Haiqian Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Zno Thin Film ◽  
Resistive Switching Memory ◽  
Doped Zno ◽  
Switching Memory

scholarly journals Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

2013 ◽  
Vol 8 (1) ◽  
pp. 483 ◽  
Author(s):  
Hsin-Wei Huang ◽  
Chen-Fang Kang ◽  
Fang-I Lai ◽  
Jr-Hau He ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Oxygen Pressure ◽  
Pressure Ratio ◽  
Zno Thin Film ◽  
Resistive Switching Memory ◽  
Switching Memory

Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method

2018 ◽  
Vol 29 (21) ◽  
pp. 18733-18741 ◽  
Author(s):  
Vrushali S. Dongle ◽  
Akshata A. Dongare ◽  
Navaj B. Mullani ◽  
Pravin S. Pawar ◽  
Prashant B. Patil ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Device ◽  
Zno Thin Film ◽  
Reaction Method ◽  
Resistive Switching Memory ◽  
Layer Adsorption ◽  
Switching Memory ◽  
Ionic Layer

Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film

2020 ◽  
Vol 12 (48) ◽  
pp. 54168-54173
Author(s):  
Hang-Lv Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Thermal analysis for observing conductive filaments in amorphous InGaZnO thin film resistive switching memory

2014 ◽  
Vol 105 (12) ◽  
pp. 123506 ◽  
Author(s):  
Keisuke Kado ◽  
Mutsunori Uenuma ◽  
Kriti Sharma ◽  
Haruka Yamazaki ◽  
Satoshi Urakawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Analysis ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Amorphous Ingazno ◽  
Switching Memory
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