scholarly journals Zeolitic-imidazole framework thin film-based flexible resistive switching memory

RSC Advances ◽  
2017 ◽  
Vol 7 (34) ◽  
pp. 21045-21049 ◽  
Author(s):  
Myung-Joo Park ◽  
Jang-Sik Lee
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Mechanical Stability ◽  
Memory Device ◽  
Dip Coating ◽  
Resistive Switching Memory ◽  
Coating Method ◽  
Dip Coating Method ◽  
Switching Memory

A flexible resistive switching memory device based on ZIF-8 is fabricated using a dip coating method. The device shows reliable resistive switching with mechanical stability.

A Redox-Based Resistive Switching Memory Device Consisting of Organic-Inorganic Hybrid Perovskite/Polymer Composite Thin Film

2017 ◽  
Vol 3 (12) ◽  
pp. 1700344 ◽  
Author(s):  
Ender Ercan ◽  
Jung-Yao Chen ◽  
Ping-Chun Tsai ◽  
Jeun-Yan Lam ◽  
Sophia Chao-Wei Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Polymer Composite ◽  
Resistive Switching ◽  
Memory Device ◽  
Composite Thin Film ◽  
Inorganic Hybrid ◽  
Resistive Switching Memory ◽  
Hybrid Perovskite ◽  
Switching Memory

Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method

2018 ◽  
Vol 29 (21) ◽  
pp. 18733-18741 ◽  
Author(s):  
Vrushali S. Dongle ◽  
Akshata A. Dongare ◽  
Navaj B. Mullani ◽  
Pravin S. Pawar ◽  
Prashant B. Patil ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Device ◽  
Zno Thin Film ◽  
Reaction Method ◽  
Resistive Switching Memory ◽  
Layer Adsorption ◽  
Switching Memory ◽  
Ionic Layer

scholarly journals Tuning Deposition of Magnetic Metallic Nanoparticles from Periodic Pattern to Thin Film Entrainment by Dip Coating Method

Langmuir ◽  
2014 ◽  
Vol 30 (30) ◽  
pp. 9028-9035 ◽  
Author(s):  
J. Dugay ◽  
R. P. Tan ◽  
A. Loubat ◽  
L.-M. Lacroix ◽  
J. Carrey ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Nanoparticles ◽  
Dip Coating ◽  
Periodic Pattern ◽  
Coating Method ◽  
Dip Coating Method

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film

2020 ◽  
Vol 12 (48) ◽  
pp. 54168-54173
Author(s):  
Hang-Lv Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Effect of ZnO on a Superhydrophilic Self-Cleaning Properties of TiO2/SiO2 Thin Film on Glass Slide Substrate

2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Visible Light ◽  
Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Coating Method ◽  
Dip Coating Method

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory
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