Experimental evidence of impurity-band transport in p-type polycrystalline germanium film

2020 ◽  
Vol 585 ◽  
pp. 412100
Author(s):  
Zhaoguo Li ◽  
Liping Peng ◽  
Jicheng Zhang ◽  
Jia Li ◽  
Yong Zeng ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Impurity Band ◽  
Germanium Film ◽  
P Type

Defect Complexes and Non-Equilibrium Processes Underlying the P-Type Doping of GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
Fernando A. Reboredo ◽  
Sokrates T. Pantelides
Keyword(s):  
High Temperature ◽  
Experimental Evidence ◽  
First Principles ◽  
Final Anneal ◽  
First Principles Calculations ◽  
Defect Complexes ◽  
Equilibrium Processes ◽  
Open Questions ◽  
High Temperature Anneal ◽  
P Type

AbstractIt is well known that hydrogen plays a key role in p-type doping of GaN. It is believed that H passivates substitutional Mg during growth by forming a Mgs-N-Hi complex; in subsequent annealing, H is removed, resulting in p-type doping. Several open questions have remained, however, such as experimental evidence for other complexes involving Mg and H and difficulties in accounting for the relatively high-temperature anneal needed to remove H. We present first principles calculations in terms of which we show that the doping process is in fact significantly more complex. In particular, interstitial Mg plays a major role in limiting p-type doping. Overall, several substitutional/interstitial complexes form and can bind H, with vibrational frequencies that account for hitherto unidentified observed lines. We predict that these defects, which limit doping efficiency, can be eliminated by annealing in an atmosphere of H and N prior to the final anneal that removes H.

Temperature Dependence of the Electrical Transport of Carbon Doped Gan

1996 ◽  
Vol 421 ◽  
Author(s):  
Wim Geerts ◽  
J.D. MacKenzie ◽  
C.R. Abernathy ◽  
S.J Pearton ◽  
Thomas Schmiedel
Keyword(s):  
Activation Energy ◽  
Charge Transport ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Effective Activation Energy ◽  
Impurity Band ◽  
Hall Voltage ◽  
Effective Activation ◽  
Carbon Doped ◽  
P Type

AbstractThe temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

Photoluminescence of heavily doped GaAs and Ga0.85In0.15As

1991 ◽  
Vol 69 (3-4) ◽  
pp. 339-345 ◽  
Author(s):  
R. Benzaquen ◽  
T. Erland ◽  
C. Lacelle ◽  
E. Fortin ◽  
A. P. Roth
Keyword(s):  
Impurity Band ◽  
Many Body ◽  
Interparticle Interactions ◽  
Impurity States ◽  
Potential Fluctuations ◽  
Heavily Doped ◽  
High Concentrations ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Acceptor Binding Energy

Zinc-doped, p-type, GaAs and Ga0.85In0.15As samples with a carrier concentration up to p = 1.95 × 1020 cm−3 were studied by low-temperature photoluminescence. At low doping levels, recombinations involving impurity states provide a measurement of the zinc-acceptor binding energy in the Ga0.85In0.15As alloy. At high concentrations, the discrete acceptor levels are replaced by an impurity band. In the presence of a high density of impurities, potential fluctuations and interparticle interactions result in a band-gap renormalization that is observed with photoluminescence experiments. This phenomenon is analyzed on the basis of available models that take into account the nonconservation of momentum for optical transitions as well as many-body effects.

Impurity Band in p-Type CuInSe2

1999 ◽  
Vol 176 (2) ◽  
pp. 1009-1016 ◽  
Author(s):  
E. Arushanov ◽  
J. H. Schön ◽  
H. Matsushita ◽  
T. Takizawa
Keyword(s):  
Impurity Band ◽  
P Type

scholarly journals Thermal ionization energy of hydrogen-like impurities in semiconductor materials

2020 ◽  
pp. 28-41 ◽  
Author(s):  
Nikolai A. Poklonski ◽  
Sergey A. Vyrko ◽  
Aliaksandr N. Dzeraviaha
Keyword(s):  
Fermi Level ◽  
Ionization Energy ◽  
Energy Levels ◽  
Impurity Band ◽  
Thermal Ionization ◽  
Semiconductor Materials ◽  
V Band ◽  
Compensation Ratio ◽  
P Type ◽  
Type Crystal

In the work the dependence of the thermal ionization energy of hydrogen-like donors and acceptors on their concentration in n- and p-type semiconductors is analyzed analytically and numerically. The impurity concentrations and temperatures at which the semiconductors are on the insulator side of the concentration insulator – metal phase transition (Mott transition) are considered. It is assumed that impurities in the crystal are distributed randomly (according to Poisson), and their energy levels are distributed normally (according to Gauss). In the quasi-classical approximation, it is shown, for the first time, that the decrease in the ionization energy of impurities mainly occurs due to the joint manifestation of two reasons. Firstly, from the excited states of electrically neutral impurities, a quasicontinuous band of allowed energy values is formed for c-band electrons in an n-type crystal (or for v-band holes in a p-type crystal). This reduces the energy required for the thermally activated transition of electron from the donor to the c-band (for the transition of the hole from the acceptor to the v-band). Secondly, from the ground (unexcited) states of impurities a classical impurity band is formed, the width of which at low temperatures is determined only by the concentration of impurity ions. In moderately compensated semiconductors (when the ratio of the concentration of minority impurities to the concentration of majority impurities is less than 50 %) the Fermi level is located closer to the edge of the band of allowed energy values than the middle of the impurity band, that issue reduces thermal ionization energy of impurities from states in the vicinity of the Fermi level (transition of electron from a donor to the c-band, or hole from an acceptor to the v-band). Previously, these two causes of decrease in the thermal ionization energy due to increase in the concentration of impurities were considered separately. The results of calculations according to the proposed formulas are quantitatively agree with the known experimental data for a number of semiconductor materials (germanium, silicon, diamond, gallium arsenide and phosphide, silicon carbide, zinc selenide) with a moderate compensation ratio.

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

2012 ◽  
Vol 101 (8) ◽  
pp. 082106 ◽  
Author(s):  
Brendan Gunning ◽  
Jonathan Lowder ◽  
Michael Moseley ◽  
W. Alan Doolittle
Keyword(s):  
Impurity Band ◽  
P Type ◽  
Band Conduction ◽  
Freeze Out

Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates

2020 ◽  
Vol 8 (40) ◽  
pp. 14203-14207
Author(s):  
Michitaka Fukumoto ◽  
Chang Yang ◽  
Wenlei Yu ◽  
Christian Patzig ◽  
Thomas Höche ◽  
...  
Keyword(s):  
Thin Films ◽  
Theoretical Prediction ◽  
Experimental Evidence ◽  
Wide Bandgap ◽  
Glass Substrates ◽  
P Type

Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction.

scholarly journals Defect Complexes and Non-Equilibrium Processes Underlying the P-Type Doping of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 508-513
Author(s):  
Fernando A. Reboredo ◽  
Sokrates T. Pantelides
Keyword(s):  
High Temperature ◽  
Experimental Evidence ◽  
First Principles ◽  
Final Anneal ◽  
First Principles Calculations ◽  
Defect Complexes ◽  
Equilibrium Processes ◽  
Open Questions ◽  
High Temperature Anneal ◽  
P Type

It is well known that hydrogen plays a key role in p-type doping of GaN. It is believed that H passivates substitutional Mg during growth by forming a Mgs-N-Hi complex; in subsequent annealing, H is removed, resulting in p-type doping. Several open questions have remained, however, such as experimental evidence for other complexes involving Mg and H and difficulties in accounting for the relatively high-temperature anneal needed to remove H. We present first principles calculations in terms of which we show that the doping process is in fact significantly more complex. In particular, interstitial Mg plays a major role in limiting p-type doping. Overall, several substitutional/interstitial complexes form and can bind H, with vibrational frequencies that account for hitherto unidentified observed lines. We predict that these defects, which limit doping efficiency, can be eliminated by annealing in an atmosphere of H and N prior to the final anneal that removes H.

Sign in / Sign up

Export Citation Format

Share Document