Impedance spectroscopy of Au/TiO2/n-Si metal-insulator-semiconductor (MIS) capacitor

2020 ◽  
Vol 580 ◽  
pp. 411945 ◽  
Author(s):  
A. Büyükbaş-Uluşan ◽  
A. Tataroğlu
Keyword(s):  
Impedance Spectroscopy ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Capacitor

scholarly journals Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy

2018 ◽  
Vol 8 (9) ◽  
pp. 1493 ◽  
Author(s):  
Hideyuki Hatta ◽  
Yuhi Miyagawa ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Takashi Hamada ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Field Effect Transistors ◽  
Interface State ◽  
Interface States ◽  
Localized States ◽  
Electrical Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators ◽  
Mis Capacitors

Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated.

scholarly journals Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures

2019 ◽  
Vol 125 (8) ◽  
pp. 084501 ◽  
Author(s):  
Rainer Schmidt ◽  
Patrick Mayrhofer ◽  
Ulrich Schmid ◽  
Achim Bittner
Keyword(s):  
Impedance Spectroscopy ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

2004 ◽  
Vol 38 (12) ◽  
pp. 1390-1393
Author(s):  
V. A. Terekhov ◽  
A. N. Man’ko ◽  
E. N. Bormontov ◽  
V. N. Levchenko ◽  
S. Yu. Trebunskikh ◽  
...  
Keyword(s):  
Electromagnetic Radiation ◽  
Ultrashort Pulses ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures

Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator- Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
Sign in / Sign up

Export Citation Format

Share Document