Effects of GaN capping layer on carrier occupation and interband transition probability of vertically coupled InGaN/GaN quantum dots

2020 ◽  
Vol 578 ◽  
pp. 411846
Author(s):  
Seoung-Hwan Park ◽  
Doyeol Ahn
Keyword(s):  
Quantum Dots ◽  
Interband Transition ◽  
Transition Probability ◽  
Capping Layer

Investigation of various capping layer configuration on heterogeneously coupled SML on SK quantum dots heterostructure

2019 ◽  
Author(s):  
Pravin P. Raut ◽  
Rajkumar RamaVath ◽  
Jhuma Saha ◽  
Debabrata Das ◽  
Debiprasad Panda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Capping Layer

Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots

2004 ◽  
Vol 43 (4B) ◽  
pp. 1978-1980 ◽  
Author(s):  
Pachamuthu Jayavel ◽  
Hirokazu Tanaka ◽  
Takashi Kita ◽  
Osamu Wada ◽  
Hiroji Ebe ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Polarization ◽  
Inas Quantum Dots ◽  
Capping Layer

Temperature Dependence of Photoluminescence for Spin-Coated Semiconductor Quantum Dots and Quantum Dot-Dye Nanoassemblies on Quartz Substrate

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940005
Author(s):  
E. Zenkevich ◽  
A. Stupak ◽  
C. von Borczyskowski
Keyword(s):  
Phase Transition ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Quartz Substrate ◽  
Semiconductor Quantum Dots ◽  
Porphyrin Molecule ◽  
Specific Change ◽  
Capping Layer ◽  
Glass Forming

The attachment of pyridyl substituted porphyrin molecule to the surface of CdSe/ZnS quantum dots in solutions is realized in the competition with capping ligand TOPO molecules resulting in the specific change of photoluminescence for the quantum dots across the temperature range of 77–290[Formula: see text]K. We have shown that fixation of alone quantum dots or quantum dot-porphyrin nanoassemblies on quartz substrate changes significantly temperature dependence of photoluminescence. In contrast to the samples in a glass-forming solution no phase transition of the TOPO capping layer was observed upon removal of the capping layer.

Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

2015 ◽  
Vol 1743 ◽  
Author(s):  
S. Upadhyay ◽  
A Mandal ◽  
A. Basu ◽  
P. Singh ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Blue Shift ◽  
Low Energy ◽  
Stress Generation ◽  
Carbon Ions ◽  
Implantation Energy ◽  
Carbon Ion ◽  
Capping Layer ◽  
Pl Intensity

ABSTRACTUnder controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

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