scholarly journals Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: Application to optoelectronic devices

2017 ◽  
Author(s):  
Antonio David Utrilla Lomas
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Devices ◽  
Capping Layer

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals Encapsulated Passivation of Perovskite Quantum Dot (CsPbBr3) Using a Hot-Melt Adhesive (EVA-TPR) for Enhanced Optical Stability and Efficiency

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Surface Defects ◽  
Optoelectronic Devices ◽  
Ethylene Vinyl Acetate ◽  
Light Emitting ◽  
Optical Stability ◽  
Perovskite Quantum Dots ◽  
Polymer Light Emitting Diodes ◽  
Hot Melt

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).

Heterostructures of 2D materials-quantum dots (QDs) for optoelectronic devices: challenges and opportunities

2021 ◽  
Author(s):  
Sudesh Yadav ◽  
Satya Ranjan Jena ◽  
Bhavya M.B. ◽  
Ali Altaee ◽  
Manav Saxena ◽  
...  
Keyword(s):  
Quantum Dots ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Challenges And Opportunities

Optical Characterization of CdSe Colloidal Quantum Dot/ MEH-PPV Polymer Nanocomposites Spin-cast on GaAs Substrates

2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Optoelectronic Devices ◽  
Photogenerated Electron ◽  
Polymer Nanocomposite ◽  
Colloidal Quantum Dots ◽  
Infrared Light ◽  
Gaas Substrates ◽  
Conducting Polymer Nanocomposite ◽  
Colloidal Quantum Dot

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.

Self-assembling quantum dots for optoelectronic devices on Si and GaAs

2001 ◽  
Vol 9 (1) ◽  
pp. 164-174 ◽  
Author(s):  
K. Eberl ◽  
M.O. Lipinski ◽  
Y.M. Manz ◽  
W. Winter ◽  
N.Y. Jin-Phillipp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Devices ◽  
Self Assembling

Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices

2011 ◽  
Vol 151 (19) ◽  
pp. 1394-1399 ◽  
Author(s):  
K. Ghosh ◽  
S. Kundu ◽  
N. Halder ◽  
M. Srujan ◽  
S. Sengupta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Devices ◽  
Thermally Stable

scholarly journals InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

2021 ◽  
Vol 8 ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Recent Work ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Size Control ◽  
Chemical Vapor ◽  
Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

The Application of Carbon and Graphene Quantum Dots to Emerging Optoelectronic Devices

2021 ◽  
pp. 421-436
Author(s):  
Cyril Oluchukwu Ugwuoke ◽  
Sabastine Ezugwu ◽  
S. L. Mammah ◽  
A. B. C. Ekwealor ◽  
Fabian I. Ezema
Keyword(s):  
Quantum Dots ◽  
Graphene Quantum Dots ◽  
Optoelectronic Devices
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