N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

2020 ◽  
Vol 580 ◽  
pp. 411819 ◽  
Author(s):  
Hengfang Zhang ◽  
Plamen P. Paskov ◽  
Olof Kordina ◽  
Jr-Tai Chen ◽  
Vanya Darakchieva
Keyword(s):  
Surface Morphology ◽  
Crystal Quality ◽  
Substrate Orientation

Preparation of InN by Means of AP-HCVD Using In Buffer Layers

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroaki Yokoo ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Electrical Property ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Indium Nitride ◽  
Buffer Layers ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quality Surface

AbstractWe have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.

Investigation of crystal quality and surface morphology of ZnTe:N epilayers grown on ZnTe and GaSb substrates

1994 ◽  
Vol 138 (1-4) ◽  
pp. 523-528 ◽  
Author(s):  
R.J. Miles ◽  
J.F. Swenberg ◽  
M.W. Wang ◽  
M.C. Phillips ◽  
T.C. McGill
Keyword(s):  
Surface Morphology ◽  
Crystal Quality

Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates

2011 ◽  
Vol 46 (4) ◽  
pp. 551-554 ◽  
Author(s):  
Qixin Guo ◽  
Masaki Nada ◽  
Yaliu Ding ◽  
Katsuhiko Saito ◽  
Tooru Tanaka ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Flow Rate ◽  
Gas Flow ◽  
Crystal Quality ◽  
Gas Flow Rate ◽  
Gaas Substrates

Improvement in Surface Morphology and Crystal Epitaxial CaF2 on Si (100) Through two Mbe Growth Stages

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshihiro Morimoto ◽  
Shoichiro Matsumoto ◽  
Shoji Sudo ◽  
Kiyoshi Yoneda
Keyword(s):  
Surface Morphology ◽  
Smooth Surface ◽  
Growth Stage ◽  
Early Growth ◽  
Crystal Quality ◽  
Growth Stages ◽  
Optimum Conditions ◽  
Si Substrate ◽  
Mbe Growth

AbstractWe report the first study on improvement in surface morphology and crystal quality of as—grown epitaxial CaF2 film on a (100) Si substrate grown through two MBE growth stages without any post-growth treatment. The degree of improvement in surfacemorphology and crystal quality depends not only on the thickness of an initial thin CaF2 film grown at the early growth stage of 550ºC but also on both the subsrate temperature and thickness of a sequential grown CaF2 film used for thesecond growth stage. Under optimum conditions, the CaF2 films exhibited high quality with an RBS/channeling minimum yield of 4%, together with a very smooth surface morphology without any other nuclel or cracks.

Recrystallization of Polycrystalline Silicon Over SiO2 through Strip Electron Beam Irradiation

1983 ◽  
Vol 23 ◽  
Author(s):  
Y. Hayafuji ◽  
T. Yanada ◽  
H. Hayashi ◽  
K. E. Williams ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Simple Model ◽  
Polycrystalline Silicon ◽  
Electron Beam Irradiation ◽  
Crystalline Silicon ◽  
Growth Direction ◽  
Crystal Quality ◽  
Beam Irradiation ◽  
Growth Interface ◽  
Substrate Orientation

ABSTRACTWe have studied the influences of substrate orientation and growth direction on laterally seeded recrystallization of poly-crystalline silicon on a SiO2; film through strip electron beam irradiation. We found that growth in a [110] direction produced films with better crystal quality than growth in a [100] direction on a (001) substrate, and that growth in a [211] direction provides better crystal quality than growth in a [011] direction on a (111) substrate. A simple model of the growth interface composed of {111} planes is proposed

Improved Crystal Quality and Surface Morphology of Nonpolar a-plane GaN Grown on r-plane Sapphire Substrates

2011 ◽  
Vol 58 (4(1)) ◽  
pp. 873-877 ◽  
Author(s):  
Dong Ho Kim ◽  
Su Jin Kim ◽  
Dong Ju Chae ◽  
Ji Won Yang ◽  
Jae In Sim ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Crystal Quality ◽  
Sapphire Substrates

Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices

2005 ◽  
Vol 483-485 ◽  
pp. 141-146 ◽  
Author(s):  
Bernd Thomas ◽  
Christian Hecht
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Crystal Quality ◽  
Process Conditions ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Force Microscopy ◽  
Atomic Force ◽  
In Doping

In this paper we present recent results of epitaxial growth of 4H-SiC on 3” (0001) 8° and 4° off-oriented wafers using a multi-wafer hot-wall CVD system. This equipment exhibits a capacity of 5x3” or 7x2” wafers per run. By optimizing the process conditions epitaxial layers with excellent crystal quality, purity and homogeneity in doping and thickness were grown. The intra-wafer as well as the wafer-to-wafer homogeneity will be illustrated by doping and thickness mappings of a full-loaded run. Surface morphology of epitaxial layers on 8° and 4° off-oriented wafers was investigated by atomic force microscopy.

Sign in / Sign up

Export Citation Format

Share Document