Recrystallization of Polycrystalline Silicon Over SiO2 through Strip Electron Beam Irradiation

1983 ◽  
Vol 23 ◽  
Author(s):  
Y. Hayafuji ◽  
T. Yanada ◽  
H. Hayashi ◽  
K. E. Williams ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Simple Model ◽  
Polycrystalline Silicon ◽  
Electron Beam Irradiation ◽  
Crystalline Silicon ◽  
Growth Direction ◽  
Crystal Quality ◽  
Beam Irradiation ◽  
Growth Interface ◽  
Substrate Orientation

ABSTRACTWe have studied the influences of substrate orientation and growth direction on laterally seeded recrystallization of poly-crystalline silicon on a SiO2; film through strip electron beam irradiation. We found that growth in a [110] direction produced films with better crystal quality than growth in a [100] direction on a (001) substrate, and that growth in a [211] direction provides better crystal quality than growth in a [011] direction on a (111) substrate. A simple model of the growth interface composed of {111} planes is proposed

High Current Density Electron Beam Induced Desorption

1988 ◽  
Vol 129 ◽  
Author(s):  
S.D. Berger ◽  
J.M. Macaulay ◽  
L.M. Brown ◽  
R.M. Allen
Keyword(s):  
Electron Beam ◽  
Simple Model ◽  
Current Density ◽  
Electron Beam Irradiation ◽  
High Current Density ◽  
Inorganic Materials ◽  
High Current ◽  
Beam Irradiation ◽  
Hole Formation ◽  
Small Probe

ABSTRACTHigh current density electron beam irradiation with a small probe can lead to the production of holes in a variety of inorganic materials. We review some of the experimental observations of the hole formation process and compare these to the predictions of a simple model.

scholarly journals Электронно-пучковая кристаллизация тонких пленок аморфного субоксида кремния

2021 ◽  
Vol 47 (6) ◽  
pp. 26
Author(s):  
Е.А. Баранов ◽  
В.О. Константинов ◽  
В.Г. Щукин ◽  
А.О. Замчий ◽  
И.Е. Меркулова ◽  
...  
Keyword(s):  
Electron Beam ◽  
Polycrystalline Silicon ◽  
Electron Beam Irradiation ◽  
Beam Current ◽  
Beam Irradiation ◽  
Stoichiometric Coefficient ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Suboxide ◽  
First Time

Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of an electron beam irradiation of amorphous hydrogenated silicon suboxide films with a stoichiometric coefficient of 0.5 (a-SiO0.5:H) and a thickness of 580 nm. The accelerating voltage of the electron beam was 2000 V, and the beam current was 100 mA. Raman spectra of silicon films after annealing are obtained depending on the time of electron beam irradiation of the initial material. It is shown that as a result of annealing, poly-Si is formed, the stress in which varied from compression to tension depending on the time of exposure.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

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