Improved Crystal Quality and Surface Morphology of Nonpolar a-plane GaN Grown on r-plane Sapphire Substrates

2011 ◽  
Vol 58 (4(1)) ◽  
pp. 873-877 ◽  
Author(s):  
Dong Ho Kim ◽  
Su Jin Kim ◽  
Dong Ju Chae ◽  
Ji Won Yang ◽  
Jae In Sim ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Crystal Quality ◽  
Sapphire Substrates

Preparation of InN by Means of AP-HCVD Using In Buffer Layers

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroaki Yokoo ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Electrical Property ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Indium Nitride ◽  
Buffer Layers ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quality Surface

AbstractWe have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

2020 ◽  
Vol 580 ◽  
pp. 411819 ◽  
Author(s):  
Hengfang Zhang ◽  
Plamen P. Paskov ◽  
Olof Kordina ◽  
Jr-Tai Chen ◽  
Vanya Darakchieva
Keyword(s):  
Surface Morphology ◽  
Crystal Quality ◽  
Substrate Orientation

scholarly journals Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 3933
Author(s):  
Yuan Gao ◽  
Shengrui Xu ◽  
Ruoshi Peng ◽  
Hongchang Tao ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Comparative Research ◽  
Crystal Quality ◽  
Growth Mechanisms ◽  
Migration Ability ◽  
Sapphire Substrates ◽  
Gan Crystal ◽  
Patterned Sapphire Substrates

The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with O2, and we found that the variation of thickness of sputtered AlON NLs greatly influenced GaN growth on PSSs. (1) For 10 nm thin AlON sputtering, no AlON was detected on the cone sidewalls. Still, GaN nucleated preferably in non-(0001) orientation on these sidewalls. (2) If the thickness of the sputtered AlON NL was 25 nm, AlON formed on the cone sidewalls and flat regions, and some small GaN crystals formed near the bottom of the cones. (3) If the sputtered AlON was 40 nm, the migration ability of Ga atoms would be enhanced, and GaN nucleated at the top of the cones, which have more chances to grow and generate more dislocations. Finally, the GaN growth mechanisms on PSSs with sputtered AlON NLs of different thicknesses were proposed.

Temperature Dependent Morphology Transition of GaN Films

1999 ◽  
Vol 572 ◽  
Author(s):  
A. R. A. Zauner ◽  
F. K. De Theue ◽  
P. R. Hageman ◽  
W. J. P. Van ◽  
J. J. Schermer ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Temperature Dependence ◽  
Growth Rates ◽  
Temperature Dependent ◽  
Relative Growth ◽  
Relative Growth Rates ◽  
Morphology Transition ◽  
Temperature Range ◽  
Sapphire Substrates ◽  
Low Pressure Mocvd

ABSTRACTThe temperature dependence of the surface morphology of GaN epilayers was studied with AFM. The layers were grown by low pressure MOCVD on (0001) sapphire substrates in the temperature range of 980°C-1085°C. In this range the (0001) and {1101} faces completely determine the morphology of 1.5 μm thick Ga-faced GaN films. For specimens grown at 20 mbar and temperatures below 1035°C the {1101} faces dominate the surface, which results in matt-white layers. At higher growth temperatures the morphology is completely determined by (0001) faces, which lead to smooth and transparent samples. For growth at 50 mbar, this transition takes place between 1000°C and 1015°C. It is shown that the morphology of the films can be described using a parameter αGaN, which is proportional to the relative growth rates of the (0001) and the {1101} faces.

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown onr-Plane Sapphire Substrates

2011 ◽  
Vol 50 (8R) ◽  
pp. 080201
Author(s):  
Tom J. Badcock ◽  
Rui Hao ◽  
Michelle A. Moram ◽  
Menno J. Kappers ◽  
Phil Dawson ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Sapphire Substrates

Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates

2004 ◽  
Vol 269 (1) ◽  
pp. 128-133 ◽  
Author(s):  
Abhishek Jain ◽  
Srinivasan Raghavan ◽  
Joan M Redwing
Keyword(s):  
Surface Morphology ◽  
Film Stress ◽  
Sapphire Substrates ◽  
Mocvd Growth

Investigation of crystal quality and surface morphology of ZnTe:N epilayers grown on ZnTe and GaSb substrates

1994 ◽  
Vol 138 (1-4) ◽  
pp. 523-528 ◽  
Author(s):  
R.J. Miles ◽  
J.F. Swenberg ◽  
M.W. Wang ◽  
M.C. Phillips ◽  
T.C. McGill
Keyword(s):  
Surface Morphology ◽  
Crystal Quality
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