Efficient enhancement of light trapping in the double-textured Al doped ZnO films with nanorod and crater structures

2019 ◽  
Vol 565 ◽  
pp. 9-13 ◽  
Author(s):  
Ying Wang ◽  
Daqiang Hu ◽  
Hongbao Jia ◽  
Qian Wang
Keyword(s):  
Light Trapping ◽  
Zno Films ◽  
Doped Zno

scholarly journals Enhanced Electrical Properties of Alkali-Doped ZnO Thin Films with Chemical Process

Solar ◽  
2021 ◽  
Vol 1 (1) ◽  
pp. 30-40
Author(s):  
Jaime G. Cuadra ◽  
Samuel Porcar ◽  
Diego Fraga ◽  
Teodora Stoyanova-Lyubenova ◽  
Juan B. Carda
Keyword(s):  
Electrical Properties ◽  
Large Scale ◽  
Low Cost ◽  
Light Trapping ◽  
Hexagonal Phase ◽  
Optical Transmittance ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Axis Orientation ◽  
Doped Zno

Doped ZnO are among the most attractive transparent conductive oxides for solar cells because they are relatively cheap, can be textured for light trapping, and readily produced for large-scale coatings. Here, we focus on the development of alternative Na and K-doped ZnO prepared by an easy low-cost spray pyrolysis method for conducting oxide application. To enhance the electrical properties of zinc oxide, alkali-doped Zn1−x MxO (x = 0.03) solid solutions were investigated. The resulting layers crystallize in a single hexagonal phase of wurtzite structure with preferred c-axis orientation along a (002) crystal plane. Dense, well attached to the substrate, homogeneous and highly transparent layers were obtained with great optical transmittance higher than 80%. The optical energy band gap of doped ZnO films increase from 3.27 to 3.29 eV by doping with Na and K, respectively. The electrical resistivity of the undoped ZnO could be decreased from 1.03 × 10−1 Ω.cm to 5.64 × 10−2 Ω.cm (K-doped) and 3.18 × 10−2 (Na-doped), respectively. Lastly, the carrier concentrations increased from 5.17 × 1017 (undoped ZnO) to 1 × 1018 (doped ZnO).

Tailoring the Post-Etching of Room-Temperature-Fabricated H and Ti Co-Doped ZnO Films for Efficient Harvested Light Trapping

2019 ◽  
Vol 48 (9) ◽  
pp. 5948-5958
Author(s):  
Bing Han ◽  
Junjie Li ◽  
Weiping Wang ◽  
Fu Yang ◽  
Tingting Wu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Trapping ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure

Cobalt doped ZnO films asantireflection coating application for solar cell

2020 ◽  
Author(s):  
M. Ismail. Fathima ◽  
K. S. Joseph Wilson ◽  
A. M. S. Arulanantham
Keyword(s):  
Solar Cell ◽  
Zno Films ◽  
Coating Application ◽  
Doped Zno
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