Characterization of the microstructure and the optical and electrical properties of the direct-current magnetron sputtered CuO films at different substrate temperatures

2018 ◽  
Vol 546 ◽  
pp. 28-32 ◽  
Author(s):  
Yongli Du ◽  
Xiaoyong Gao ◽  
Xin Zhang ◽  
Xue Meng
1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.


2006 ◽  
Vol 910 ◽  
Author(s):  
Andrey Kosarev ◽  
L. Sanchez ◽  
A. Torres ◽  
T. Felter ◽  
A. Ilinskii ◽  
...  

AbstractWe report on a systematical study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by low frequency PE CVD. Silane and germane were used as feed gases diluted by hydrogen. Hydrogen dilution characterized by R= QH2/[QSiH4+QGeH4], where QH2, QSiH4, and QGeH4 are gas flows of hydrogen, silane and germane, respectively. The flow was varied in the range of R=20 to 80. Composition of the films was characterized by SIMS profiling. We did not observed a significant change of the deposition rate Vd in GeYSi1-Y:H films in all the range of R, while for Ge:H films Vd was significantly reduced after R=50. AFM characterization of the surface morphology demonstrated that at R=50 average height <H>(R) reached maximum in both Ge:H and GeYSi1-Y:H films, while average diameter <D>(R) had a minimum in GeYSi1-Y:H films and maximum in Ge:H films. Both Ge:H and GeYSi1-Y:H films demonstrated change of E04 in the studied range of R, and a minimum clearly appeared in &#61508;E at R=50-60 suggesting significant reduction in weak bonds of these films. The activation energy of conductivity Ea slightly increases with R in Ge:H films and shows no definitive trend in GeYSi1-Y:H: films. Both FTIR and SIMS data show a general trend of reducing hydrogen and oxygen content with R. These two types of films showed different behavior and correlations between surface morphology and optical and electrical properties.


2014 ◽  
Vol 2 (30) ◽  
pp. 6048-6055 ◽  
Author(s):  
Bing He ◽  
Zhongjie Ren ◽  
Shouke Yan ◽  
Zhaohui Wang

We present here the synthesis and characterization of well-ordered multilayer graphene from highly oriented polyethylene films. The obtained graphene films exhibit good optical and electrical properties.


Energies ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1434 ◽  
Author(s):  
Sarath Kumara ◽  
Xiangdong Xu ◽  
Thomas Hammarström ◽  
Yingwei Ouyang ◽  
Amir Masoud Pourrahimi ◽  
...  

To design reliable high voltage cables, clean materials with superior insulating properties capable of operating at high electric field levels at elevated temperatures are required. This study aims at the electrical characterization of a byproduct-free crosslinked copolymer blend, which is seen as a promising alternative to conventional peroxide crosslinked polyethylene currently used for high voltage direct current cable insulation. The characterization entails direct current (DC) conductivity, dielectric response and surface potential decay measurements at different temperatures and electric field levels. In order to quantify the insulating performance of the new material, the electrical properties of the copolymer blend are compared with those of two reference materials; i.e., low-density polyethylene (LDPE) and peroxide crosslinked polyethylene (XLPE). It is found that, for electric fields of 10–50 kV/mm and temperatures varying from 30 °C to 70 °C, the DC conductivity of the copolymer blend is in the range of 10−17–10−13 S/m, which is close to the conductivity of crosslinked polyethylene. Furthermore, the loss tangent of the copolymer blend is about three to four times lower than that of crosslinked polyethylene and its magnitude is on the level of 0.01 at 50 °C and 0.12 at 70 °C (measured at 0.1 mHz and 6.66 kV/mm). The apparent conductivity and trap density distributions deduced from surface potential decay measurements also confirmed that the new material has electrical properties at least as good as currently used insulation materials based on XLPE (not byproduct-free). Thus, the proposed byproduct-free crosslinked copolymer blend has a high potential as a prospective insulation medium for extruded high voltage DC cables.


1989 ◽  
Vol 149 ◽  
Author(s):  
Cheng Wang ◽  
G. N. Parsons ◽  
G. Lucovsky

ABSTRACTA systematic study of the effect of the trace impurity of oxygen and water vapor in the processing environment on the infra-red (IR), optical and electrical properties, and defect density of sputtered a-Si:H films is reported. The results are that small contents of water introduced into the argon plasma extract H-atoms from the growth surface, thereby reducing total hydrogen content and polyhydride formation in films deposited at low substrate temperatures, <150°C. This leads to a decrease of the defect density, and hence, to improvements in the photoconductivity (Δσ) and the associated quantum efficiency-mobility-lifetime(ημτ) product.


2001 ◽  
Vol 90 (7) ◽  
pp. 3432-3436 ◽  
Author(s):  
Z. L. Pei ◽  
C. Sun ◽  
M. H. Tan ◽  
J. Q. Xiao ◽  
D. H. Guan ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document