Modification and characterization of optical and electrical properties of ZnO nanostructures for potential application

2013 ◽  
Author(s):  
Shuigang Xu
1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.


2006 ◽  
Vol 910 ◽  
Author(s):  
Andrey Kosarev ◽  
L. Sanchez ◽  
A. Torres ◽  
T. Felter ◽  
A. Ilinskii ◽  
...  

AbstractWe report on a systematical study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by low frequency PE CVD. Silane and germane were used as feed gases diluted by hydrogen. Hydrogen dilution characterized by R= QH2/[QSiH4+QGeH4], where QH2, QSiH4, and QGeH4 are gas flows of hydrogen, silane and germane, respectively. The flow was varied in the range of R=20 to 80. Composition of the films was characterized by SIMS profiling. We did not observed a significant change of the deposition rate Vd in GeYSi1-Y:H films in all the range of R, while for Ge:H films Vd was significantly reduced after R=50. AFM characterization of the surface morphology demonstrated that at R=50 average height <H>(R) reached maximum in both Ge:H and GeYSi1-Y:H films, while average diameter <D>(R) had a minimum in GeYSi1-Y:H films and maximum in Ge:H films. Both Ge:H and GeYSi1-Y:H films demonstrated change of E04 in the studied range of R, and a minimum clearly appeared in &#61508;E at R=50-60 suggesting significant reduction in weak bonds of these films. The activation energy of conductivity Ea slightly increases with R in Ge:H films and shows no definitive trend in GeYSi1-Y:H: films. Both FTIR and SIMS data show a general trend of reducing hydrogen and oxygen content with R. These two types of films showed different behavior and correlations between surface morphology and optical and electrical properties.


RSC Advances ◽  
2020 ◽  
Vol 10 (52) ◽  
pp. 31070-31086 ◽  
Author(s):  
Nimai Pathak ◽  
Partha Sarathi Ghosh ◽  
Sumanta Mukherjee ◽  
Balaji Prasad Mandal

PL and dielectric studies have been carried out on LiNbO3 and Eu3+:LiNbO3 compounds with a special focus on simultaneous tuning of optical and electrical properties for their potential application in optical–electrical integration.


2014 ◽  
Vol 2 (30) ◽  
pp. 6048-6055 ◽  
Author(s):  
Bing He ◽  
Zhongjie Ren ◽  
Shouke Yan ◽  
Zhaohui Wang

We present here the synthesis and characterization of well-ordered multilayer graphene from highly oriented polyethylene films. The obtained graphene films exhibit good optical and electrical properties.


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