Large area uniformly oriented multilayer graphene with high transparency and conducting properties derived from highly oriented polyethylene films

2014 ◽  
Vol 2 (30) ◽  
pp. 6048-6055 ◽  
Author(s):  
Bing He ◽  
Zhongjie Ren ◽  
Shouke Yan ◽  
Zhaohui Wang

We present here the synthesis and characterization of well-ordered multilayer graphene from highly oriented polyethylene films. The obtained graphene films exhibit good optical and electrical properties.

2017 ◽  
Vol 214 (5) ◽  
pp. 1600721 ◽  
Author(s):  
Bharat Sharma ◽  
Timo Schumann ◽  
Myriano H. de Oliveira ◽  
J. Marcelo J. Lopes

2012 ◽  
Vol 520 (21) ◽  
pp. 6642-6647 ◽  
Author(s):  
Yasemin Caglar ◽  
Dilek Duygu Oral ◽  
Mujdat Caglar ◽  
Saliha Ilican ◽  
M. Allan Thomas ◽  
...  

2015 ◽  
Vol 106 (25) ◽  
pp. 253105 ◽  
Author(s):  
Wei Cai ◽  
Cong Wang ◽  
Xiaohong Fang ◽  
Liyou Yang ◽  
Xiaoyuan Chen

1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.


2010 ◽  
Vol 645-648 ◽  
pp. 633-636 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
James C. Culbertson ◽  
Glenn G. Jernigan ◽  
...  

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.


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