Influence of position dependent effective mass on donor binding energy in square and V-shaped quantum wells in the presence of a magnetic field

2013 ◽  
Vol 418 ◽  
pp. 47-51 ◽  
Author(s):  
H. Panahi ◽  
S. Golshahi ◽  
M. Doostdar
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Donor Binding Energy

Electron effective mass and Si-donor binding energy inGaAs1−xNxprobed by a high magnetic field

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
G. Allison ◽  
S. Spasov ◽  
A. Patanè ◽  
L. Eaves ◽  
N. V. Kozlova ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Effective Mass ◽  
High Magnetic Field ◽  
Electron Effective Mass ◽  
Donor Binding Energy

Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

2002 ◽  
Vol 91 (4) ◽  
pp. 2553-2555 ◽  
Author(s):  
Jun Shao ◽  
Achim Dörnen ◽  
Rolf Winterhoff ◽  
Ferdinand Scholz
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Exciton Binding Energy

Effect of magnetic field on off-axis donor binding energy in a nanotube

2006 ◽  
Vol 243 (6) ◽  
pp. 1263-1268 ◽  
Author(s):  
E. A. Orozco ◽  
J. D. Gonzalez ◽  
O. S. Duarte ◽  
I. D. Mikhailov
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Donor Binding Energy

THE EFFECT OF POSITION DEPENDENT EFFECTIVE MASS OF HYDROGENIC IMPURITIES IN PARABOLIC GaAs/GaAlAs QUANTUM DOTS IN A STRONG MAGNETIC FIELD

2009 ◽  
Vol 23 (26) ◽  
pp. 5109-5118 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Binding Energy ◽  
Effective Mass ◽  
Bound States ◽  
Mass Approximation ◽  
Infinite Case ◽  
Dependent Mass ◽  
The Magnetic Field ◽  
Peak Value

The binding energy of shallow hydrogenic impurities in parabolic GaAs/GaAlAs quantum dots is calculated as a function of dot radius in the influence of magnetic field. The binding energy has been calculated following a variational procedure within the effective-mass approximation. Calculations are presented with constant effective-mass and position dependent effective masses. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. The results show that the impurity binding energy (i) increases as the dot radius decreases for the infinite case, (ii) reaches a peak value around 1R* as the dot radius decreases and then diminishes to a limiting value corresponding to the radius for which there are no bound states in the well for the infinite case, and (iii) increases with the magnetic field. Also it is found that (i) the use of constant effective mass (0.067 m0) is justified for dot sizes ≥ a* where a* is the effective Bohr radius which is about 100 Å for GaAs , in the estimation of ionization energy and (ii) the binding energy shows complicated behavior when the position dependent mass is included for the dot size ≤ a*. These results are compared with the available existing literatures.

scholarly journals Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Guangxin Wang ◽  
Xiuzhi Duan ◽  
Wei Chen
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Effective Mass ◽  
Dielectric Constants ◽  
Pressure Effects ◽  
Physical Parameters ◽  
Barrier Thickness ◽  
Hydrogenic Impurity ◽  
Donor Binding Energy

Within the framework of the effective mass approximation, barrier thickness and hydrostatic pressure effects on the ground-state binding energy of hydrogenic impurity are investigated in wurtzite (WZ) GaN/AlxGa1−xN strained quantum dots (QDs) by means of a variational approach. The hydrostatic pressure dependence of physical parameters such as electron effective mass, energy band gaps, lattice constants, and dielectric constants is considered in the calculations. Numerical results show that the donor binding energy for any impurity position increases when the hydrostatic pressure increases. The donor binding energy for the impurity located at the central of the QD increases firstly and then begins to drop quickly with the decrease of QD radius (height) in strong built-in electric fields. Moreover, the influence of barrier thickness along the QD growth direction and Al concentration on donor binding energy is also investigated. In addition, we also found that impurity positions have great influence on the donor binding energy.

scholarly journals Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

2007 ◽  
Vol 91 (14) ◽  
pp. 142120 ◽  
Author(s):  
S. Dasgupta ◽  
C. Knaak ◽  
J. Moser ◽  
M. Bichler ◽  
S. F. Roth ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
High Mobility ◽  
Persistent Photoconductivity ◽  
Thermally Activated ◽  
Donor Binding Energy

scholarly journals Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

2020 ◽  
Vol 330 ◽  
pp. 01012
Author(s):  
Walid Belaid ◽  
Haddou El Ghazi ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Variational Approach ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Coupled Quantum Wells ◽  
Surrounding Matrix ◽  
Main Effect ◽  
Good Agreement

In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

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