Electron effective mass and Si-donor binding energy inGaAs1−xNxprobed by a high magnetic field

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
G. Allison ◽  
S. Spasov ◽  
A. Patanè ◽  
L. Eaves ◽  
N. V. Kozlova ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Effective Mass ◽  
High Magnetic Field ◽  
Electron Effective Mass ◽  
Donor Binding Energy

Filling factor dependence of electron effective mass in Si/SiGe quantum wells at high magnetic field

2001 ◽  
Vol 298 (1-4) ◽  
pp. 505-509 ◽  
Author(s):  
T Ikaida ◽  
N Miura ◽  
Y Shiraki ◽  
Y Imanaka ◽  
K Takehana ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
High Magnetic Field ◽  
Filling Factor ◽  
Electron Effective Mass ◽  
Sige Quantum Wells

Effect of magnetic field on off-axis donor binding energy in a nanotube

2006 ◽  
Vol 243 (6) ◽  
pp. 1263-1268 ◽  
Author(s):  
E. A. Orozco ◽  
J. D. Gonzalez ◽  
O. S. Duarte ◽  
I. D. Mikhailov
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Donor Binding Energy

EXCITONS IN A HIGH MAGNETIC FIELD

1996 ◽  
Vol 10 (07) ◽  
pp. 729-775 ◽  
Author(s):  
ANDREI V. KOROLEV ◽  
MICHAEL A. LIBERMAN
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
High Magnetic Field ◽  
Bose Condensate ◽  
Einstein Condensation ◽  
Interacting Electrons ◽  
New States ◽  
The Stability ◽  
Bose Einstein ◽  
Quantization Representation

A high magnetic field, such that the distance between the Landau levels exceeds the binding energy of an exciton, gives an opportunity to create various new states of matter, i.e. exciton crystal, molecular compexes, Bose–Einstein condensation an exciton gas in a semiconductor, depending on the dimensionality of the system. We consider the problem of excitonic interaction in a semiconductor in its multi-electron formulation, starting from the second-quantization representation of the Hamiltonian of interacting electrons and holes in a high magnetic field. A system of excitons in its ground state in a high magnetic field is similar to a weakly non-ideal Bose gas; whereas the excited states may be strongly bounded. It is shown that different types of exciton complexes in a quasi-one-dimensional semiconductor quantum wire, from crystals to molecular chains, can be obtained both by varying the direction and intensity of the magnetic field and by changing the exciton density. The existence and the stability of the Bose condensate in a bulk semiconductor due to an essential decrease of the interaction between excitons and an increase of their binding energy in a high magnetic field are established at a high density of excitons. Existence of the built-in condensate of excitons in a broad density range significantly changes the excitation spectrum of coupled excitons and photons in a high magnetic field and results in a number of interesting optical phenomena.

Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN.

2001 ◽  
Vol 693 ◽  
Author(s):  
M. Wojdak ◽  
J.M. Baranowski ◽  
A. Wysmolck ◽  
K. Pakula ◽  
R. Stepnicwski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Excited State ◽  
Magnetic Fields ◽  
Effective Mass ◽  
Electron Energy ◽  
Electron Transition ◽  
Electron Effective Mass ◽  
Neutral Donor ◽  
Electron Transitions ◽  
The Difference

AbstractTwo-electron transition occurs when the exciton bound to a neutral donor (DBE) recombines and leaves the donor in an excited state. The two-electron energy is therefore lower than that of the DBE peak by the difference in ground and excited state of the neutral donor. In a magnetic field the two-electron satellite splits into several components. These intra-donor excitations have been studied in homoepitaxial GaN up to magnetic fields reaching 23T. For Faraday (B‖c) configuration the two-electron transition splits mainly into 2s, 2p0, 2p+ and 2p- components. The total splitting between 2p+ and 2p- is equal to Landau energy. For Voigt (B???c) configuration in addition to transition to 2s, 2p0, 2p- and 2p+ there are additional lines which origin is discussed. It has been found that for two configurations of magnetic field the separation between 2p+ and 2p- is not exactly equal, what indicates the anisotropy of the electron effective mass. It has been found that m| = 0.205m0 and m??? = 0.225m0.

THE EFFECT OF POSITION DEPENDENT EFFECTIVE MASS OF HYDROGENIC IMPURITIES IN PARABOLIC GaAs/GaAlAs QUANTUM DOTS IN A STRONG MAGNETIC FIELD

2009 ◽  
Vol 23 (26) ◽  
pp. 5109-5118 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Binding Energy ◽  
Effective Mass ◽  
Bound States ◽  
Mass Approximation ◽  
Infinite Case ◽  
Dependent Mass ◽  
The Magnetic Field ◽  
Peak Value

The binding energy of shallow hydrogenic impurities in parabolic GaAs/GaAlAs quantum dots is calculated as a function of dot radius in the influence of magnetic field. The binding energy has been calculated following a variational procedure within the effective-mass approximation. Calculations are presented with constant effective-mass and position dependent effective masses. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. The results show that the impurity binding energy (i) increases as the dot radius decreases for the infinite case, (ii) reaches a peak value around 1R* as the dot radius decreases and then diminishes to a limiting value corresponding to the radius for which there are no bound states in the well for the infinite case, and (iii) increases with the magnetic field. Also it is found that (i) the use of constant effective mass (0.067 m0) is justified for dot sizes ≥ a* where a* is the effective Bohr radius which is about 100 Å for GaAs , in the estimation of ionization energy and (ii) the binding energy shows complicated behavior when the position dependent mass is included for the dot size ≤ a*. These results are compared with the available existing literatures.

scholarly journals Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Guangxin Wang ◽  
Xiuzhi Duan ◽  
Wei Chen
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Effective Mass ◽  
Dielectric Constants ◽  
Pressure Effects ◽  
Physical Parameters ◽  
Barrier Thickness ◽  
Hydrogenic Impurity ◽  
Donor Binding Energy

Within the framework of the effective mass approximation, barrier thickness and hydrostatic pressure effects on the ground-state binding energy of hydrogenic impurity are investigated in wurtzite (WZ) GaN/AlxGa1−xN strained quantum dots (QDs) by means of a variational approach. The hydrostatic pressure dependence of physical parameters such as electron effective mass, energy band gaps, lattice constants, and dielectric constants is considered in the calculations. Numerical results show that the donor binding energy for any impurity position increases when the hydrostatic pressure increases. The donor binding energy for the impurity located at the central of the QD increases firstly and then begins to drop quickly with the decrease of QD radius (height) in strong built-in electric fields. Moreover, the influence of barrier thickness along the QD growth direction and Al concentration on donor binding energy is also investigated. In addition, we also found that impurity positions have great influence on the donor binding energy.

SHAPE EFFECT OF SEMIMAGNETIC QUANTUM DOT ON THE BOUND MAGNETIC POLARON

2011 ◽  
Vol 10 (04n05) ◽  
pp. 665-668 ◽  
Author(s):  
A. MERWYN JASPER DE REUBEN ◽  
K. JAYAKUMAR
Keyword(s):  
Magnetic Field ◽  
Variational Principle ◽  
Binding Energy ◽  
Quantum Dot ◽  
Effective Mass ◽  
Shape Effect ◽  
Magnetic Polaron ◽  
Bound Magnetic Polaron ◽  
Mass Approximation ◽  
The Magnetic Field

The effect of geometry, concentration of Mn ion and the magnetic field on the binding energy of a donor and the donor bound magnetic polaronic shift in a finite Cd 1–x1 Mn x1 Te / Cd 1–x2 Mn x2 Te Quantum Dot within the effective mass approximation is carried out employing the variational principle. The results are presented and discussed.

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