Theoretical study on the oxidation of zigzag silicon carbide nanotubes (SiCNTs) by singlet O2

2012 ◽  
Vol 407 (21) ◽  
pp. 4238-4243
Author(s):  
Hong Wang ◽  
Wei Liu ◽  
Jing-xiang Zhao
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Silicon Carbide Nanotubes

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide

Stone–Wales defects created by low energy recoils in single-walled silicon carbide nanotubes

2009 ◽  
Vol 106 (8) ◽  
pp. 084305 ◽  
Author(s):  
Zhiguo Wang ◽  
Fei Gao ◽  
Jingbo Li ◽  
Xiaotao Zu ◽  
William J. Weber
Keyword(s):  
Silicon Carbide ◽  
Low Energy ◽  
Silicon Carbide Nanotubes

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

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