scholarly journals Exponential depletion of neutral dangling bonds density (D0) by rare-earth doping in amorphous Si films

2012 ◽  
Vol 407 (16) ◽  
pp. 3222-3224 ◽  
Author(s):  
W. Iwamoto ◽  
A.R. Zanatta ◽  
C. Rettori ◽  
P.G. Pagliuso
Keyword(s):  
Rare Earth ◽  
Rare Earth Doping ◽  
Dangling Bonds ◽  
Amorphous Si ◽  
Si Films

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Low‐Temperature Activation and Recrystallization of B+‐ and  BF 2  +  ‐ Implanted LPCVD Amorphous‐Si Films

1995 ◽  
Vol 142 (10) ◽  
pp. 3574-3578 ◽  
Author(s):  
Huang‐Chung Cheng ◽  
Fang‐Shing Wang ◽  
Yeong‐Fang Huang ◽  
Chun‐Yao Huang ◽  
Meng‐Jin Tsai
Keyword(s):  
Low Temperature ◽  
Amorphous Si ◽  
Temperature Activation ◽  
Si Films

Erbium Tris(Amide) Compounds as Source Molecules FOR Rare Earth Doping of Semiconducting Materials

1995 ◽  
Vol 415 ◽  
Author(s):  
Oliver Just ◽  
Anton C. Greenwald ◽  
William S. Rees
Keyword(s):  
Rare Earth ◽  
Solid State ◽  
Earth Element ◽  
Optoelectronic Devices ◽  
Analytical Techniques ◽  
Optically Active ◽  
Rare Earth Doping ◽  
Semiconducting Materials ◽  
Host Materials ◽  
Erbium Doped

ABSTRACTThe homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.

Rare-earth doping engineering in nanostructured ZnO: a new type of eco-friendly photocatalyst with enhanced photocatalytic characteristics

2018 ◽  
Vol 124 (9) ◽  
Author(s):  
Yue Fang ◽  
Jihui Lang ◽  
Jiaying Wang ◽  
Qiang Han ◽  
Zhe Zhang ◽  
...  
Keyword(s):  
Rare Earth ◽  
Rare Earth Doping ◽  
New Type

On the influence of rare earth doping on microstructure and phase composition of sputtered, epitaxial Bi2Sr2(Cax−1REx)Cu2O8+δ films and multilayers

1998 ◽  
Vol 302 (2-3) ◽  
pp. 207-214 ◽  
Author(s):  
A.C. Meltzow ◽  
S. Altmeyer ◽  
H. Kurz ◽  
N.D. Zakharov ◽  
S. Senz ◽  
...  
Keyword(s):  
Rare Earth ◽  
Phase Composition ◽  
Rare Earth Doping

scholarly journals Rare earth doping graphitic carbon nitride endows distinctive multiple emissions with large Stocks shifts

CCS Chemistry ◽  
2021 ◽  
pp. 1-19
Author(s):  
Xun Liu ◽  
Shangqing Zhang ◽  
Jinhui Liu ◽  
Xing Wei ◽  
Ting Yang ◽  
...  
Keyword(s):  
Rare Earth ◽  
Carbon Nitride ◽  
Graphitic Carbon ◽  
Graphitic Carbon Nitride ◽  
Rare Earth Doping

Rare-earth doping, various post-growth heat treatments and aging effects on OH− absorption in LiNbO3 crystal

2012 ◽  
Vol 135 (2-3) ◽  
pp. 416-424 ◽  
Author(s):  
De-Long Zhang ◽  
Wen-Zhu Zhang ◽  
Jian Gao ◽  
Ping-Rang Hua ◽  
Bei Chen ◽  
...  
Keyword(s):  
Rare Earth ◽  
Heat Treatments ◽  
Rare Earth Doping ◽  
Aging Effects ◽  
Linbo3 Crystal
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