Deep level transient spectroscopy of transition metal impurities in germanium

2007 ◽  
Vol 401-402 ◽  
pp. 188-191 ◽  
Author(s):  
P. Clauws ◽  
J. Van Gheluwe ◽  
J. Lauwaert ◽  
E. Simoen ◽  
J. Vanhellemont ◽  
...  
Keyword(s):  
Transition Metal ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Transient Spectroscopy

Quenched-in Defects in CW Laser Irradiated Virgin Silicon.

1982 ◽  
Vol 14 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
Heat Treatment ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect States ◽  
Native Defects ◽  
Metal Impurities ◽  
Cw Laser ◽  
Transition Metal Impurities ◽  
Transient Spectroscopy ◽  
Iron Chromium

ABSTRACTQuenched-in defects in cw laser irradiated silicon have been identified using deep level transient spectroscopy. Four among the five dominant defect states arise from transition metal impurities (iron, chromium) present in precipitates in the as-grown material and dispersed into the crystal upon heat treatment. Native defects are involved in the form of phosphorous-vacancy complexes, which account for the remaining level.

Transition Metal Contamination of Epitaxial Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
Martin P. Scott ◽  
L. Caubin ◽  
D. C. Chen ◽  
E. R. Weber ◽  
J. Rose ◽  
...  
Keyword(s):  
Transition Metal ◽  
Epitaxial Growth ◽  
Growth Condition ◽  
Deep Level Transient Spectroscopy ◽  
Metal Contamination ◽  
Deep Level ◽  
Oxygen Level ◽  
Epitaxial Silicon ◽  
Deep Level Defect ◽  
Transient Spectroscopy

ABSTRACTDeep level defects in p/p+ epitaxial silicon were characterized by deep level transient spectroscopy (DLTS). Two dominant deep level defects were found in all samples which have been identified with Fe and CrB pairs. A third deep level defect was found in most of the samples which has tentatively been identified with Ti. The concentrations of these traps were established in a large number of samples as a function of epitaxial growth condition and substrate oxygen level.

Rh: a Dopant with Mid-Gap Levels in InP and InGaAs and Superior Thermal Stability

1993 ◽  
Vol 325 ◽  
Author(s):  
H. Scheffler ◽  
B. Srocka ◽  
A. Dadgar ◽  
M. Kuttler ◽  
A. Knecht ◽  
...  
Keyword(s):  
Transition Metal ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Valence Band Edge ◽  
Internal Reference ◽  
Metal Levels ◽  
Transient Spectroscopy ◽  
Cation Sites ◽  
Reference Samples

AbstractWe investigate the influence of Rh-doping on electrical properties of InP and InGaAs. Deep level transient spectroscopy carried out on Rh-doped as well as undoped reference samples reveals a single Rh-related deep level in both semiconductors. While a Rh-related electron trap in InGaAs is situated at EC-0.38eV a Rh-related hole trap is found to exist in InP approximately 0.73 eV above the valence band edge. The internal reference rule for 3d transition metal deep levels is found to be valid for these 4d transition metal levels: their energy is constant across the InGaAs/InP heterojunction. We conclude these levels to be the single acceptor states of Rh substitutionally incorporated on cation sites.

(Invited) Deep-Level Analysis of Passivation of Transition Metal Impurities in Silicon

2018 ◽  
Vol 86 (10) ◽  
pp. 125-135
Author(s):  
J. Mullins ◽  
Vladimir Markevich ◽  
S. Leonard ◽  
M.P. Halsall ◽  
A.R. Peaker
Keyword(s):  
Transition Metal ◽  
Deep Level ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Level Analysis

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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