Transition Metal Contamination of Epitaxial Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
Martin P. Scott ◽  
L. Caubin ◽  
D. C. Chen ◽  
E. R. Weber ◽  
J. Rose ◽  
...  
Keyword(s):  
Transition Metal ◽  
Epitaxial Growth ◽  
Growth Condition ◽  
Deep Level Transient Spectroscopy ◽  
Metal Contamination ◽  
Deep Level ◽  
Oxygen Level ◽  
Epitaxial Silicon ◽  
Deep Level Defect ◽  
Transient Spectroscopy

ABSTRACTDeep level defects in p/p+ epitaxial silicon were characterized by deep level transient spectroscopy (DLTS). Two dominant deep level defects were found in all samples which have been identified with Fe and CrB pairs. A third deep level defect was found in most of the samples which has tentatively been identified with Ti. The concentrations of these traps were established in a large number of samples as a function of epitaxial growth condition and substrate oxygen level.

scholarly journals The Si Nanocrystal Trap Center Studied by Deep Level Transient Spectroscopy (DLTS)

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Tiezheng Lv ◽  
Lili Zhao
Keyword(s):  
Cross Section ◽  
High Frequency ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Point ◽  
Deep Level Defect ◽  
Trapping Mechanism ◽  
Si Nanocrystal ◽  
Transient Spectroscopy ◽  
The Individual

Si nanocrystal (NC) embedded into the SiO2matrix was made by SiO/SiO2superlattice method. Here we investigate the storage phenomena of MOS structure having Si NC inside the dielectric layer by high frequencyC-Vmethod and DLTS. DLTS treated the individual Si NC as a single point deep level defect in the oxide and revealed essences of Si NC storage, such as a large capture cross section at about 1–7 × 10−13 cm2and potential barrier at about 1.6 eV. These two properties we observed are consistent with Si NC dimensions of 5–7 nm in the planar TEM image, and previousI-Vcharacterization in the MOS-like structure. These results are helpful to understand the principle of charge storage of this structure and optimize the performance of real Si NC device. The trapping mechanism in MOS systems containing Si NCs is related to the quantum levels of the Si NC band structure at around 300 K.

scholarly journals Formation and annealing of radiation defects in silicon, implanted with hydrogen ions

2019 ◽  
pp. 68-72
Author(s):  
Alexei V. Giro ◽  
Yuri M. Pokotilo ◽  
Alla N. Petukh
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Initial Level ◽  
Deep Level ◽  
Radiation Defects ◽  
Hydrogen Ions ◽  
Epitaxial Silicon ◽  
Hydrogen Atoms ◽  
Transient Spectroscopy ◽  
Isolated Point

Energy spectrum of radiation defect levels in n-type epitaxial silicon irradiated with 300 keV hydrogen ions was studied by DLTS (deep level transient spectroscopy) method. The increase in the amplitude of DLTS peak with the increase in the temperature of its registration was found. This indicates the formation of areas of defects accumulation with displacement density lower initial level of doping. After exposure of irradiated samples at room temperature for several months, these areas decay with isolated point A-, E-centers and hydrogen defects with an Ec – 0.31 eV level formation. It is shown that complexes with an Ec – 0.31 eV level are formed by attaching hydrogen atoms to A-center. At Т > 150 °С, this defect begins to anneal, and at the same time A-center concentration is increased.

Deep level transient spectroscopy of transition metal impurities in germanium

2007 ◽  
Vol 401-402 ◽  
pp. 188-191 ◽  
Author(s):  
P. Clauws ◽  
J. Van Gheluwe ◽  
J. Lauwaert ◽  
E. Simoen ◽  
J. Vanhellemont ◽  
...  
Keyword(s):  
Transition Metal ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Transient Spectroscopy

Rh: a Dopant with Mid-Gap Levels in InP and InGaAs and Superior Thermal Stability

1993 ◽  
Vol 325 ◽  
Author(s):  
H. Scheffler ◽  
B. Srocka ◽  
A. Dadgar ◽  
M. Kuttler ◽  
A. Knecht ◽  
...  
Keyword(s):  
Transition Metal ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Valence Band Edge ◽  
Internal Reference ◽  
Metal Levels ◽  
Transient Spectroscopy ◽  
Cation Sites ◽  
Reference Samples

AbstractWe investigate the influence of Rh-doping on electrical properties of InP and InGaAs. Deep level transient spectroscopy carried out on Rh-doped as well as undoped reference samples reveals a single Rh-related deep level in both semiconductors. While a Rh-related electron trap in InGaAs is situated at EC-0.38eV a Rh-related hole trap is found to exist in InP approximately 0.73 eV above the valence band edge. The internal reference rule for 3d transition metal deep levels is found to be valid for these 4d transition metal levels: their energy is constant across the InGaAs/InP heterojunction. We conclude these levels to be the single acceptor states of Rh substitutionally incorporated on cation sites.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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