Quenched-in Defects in CW Laser Irradiated Virgin Silicon.

1982 ◽  
Vol 14 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
Heat Treatment ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect States ◽  
Native Defects ◽  
Metal Impurities ◽  
Cw Laser ◽  
Transition Metal Impurities ◽  
Transient Spectroscopy ◽  
Iron Chromium

ABSTRACTQuenched-in defects in cw laser irradiated silicon have been identified using deep level transient spectroscopy. Four among the five dominant defect states arise from transition metal impurities (iron, chromium) present in precipitates in the as-grown material and dispersed into the crystal upon heat treatment. Native defects are involved in the form of phosphorous-vacancy complexes, which account for the remaining level.

Deep level transient spectroscopy of transition metal impurities in germanium

2007 ◽  
Vol 401-402 ◽  
pp. 188-191 ◽  
Author(s):  
P. Clauws ◽  
J. Van Gheluwe ◽  
J. Lauwaert ◽  
E. Simoen ◽  
J. Vanhellemont ◽  
...  
Keyword(s):  
Transition Metal ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Transient Spectroscopy

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Bistable Defects Induced in GaAs by H2 Plasma Process

1989 ◽  
Vol 146 ◽  
Author(s):  
X. Boddaert ◽  
D. Vuillaume ◽  
D. Stievenard ◽  
J.C. Bourgoin ◽  
P. Boher
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Plasma Process ◽  
Stable States ◽  
Native Defects ◽  
Complete Determination ◽  
Lec Gaas ◽  
Transient Spectroscopy ◽  
Configuration Coordinate

ABSTRACTWe have studied the effect of an H2 plasma (150 W; 150°C; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy, we have shown that the plasma induces a main bistable defect DO, which has two possible stable states Dl and D2. A complete determination of the corresponding Configuration Coordinate Diagram has been done. Finally, no correlation has been obtained between DO and the native defects EL6, EL3 and EL2. No passivation of the EL2 defect has been observed and the evolution of the D0 concentration results from the association of hydrogen with AsGa. These observations are in disagreement with the identification of EL2 with an isolated AsGa.

Deep level transient spectroscopy of CVD diamond: the observation of defect states in hydrogenated films

2001 ◽  
Vol 10 (3-7) ◽  
pp. 610-614 ◽  
Author(s):  
Olivier Gaudin ◽  
Michael D. Whitfield ◽  
John S. Foord ◽  
Richard B. Jackman
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Cvd Diamond ◽  
Defect States ◽  
Transient Spectroscopy

Defect States In p-ZnSe:N Grown By MOVPE

1996 ◽  
Vol 442 ◽  
Author(s):  
Shizuo Fujita ◽  
Ken-Ichi Ogata ◽  
Daisuke Kawaguchi ◽  
Zhi Gang Peng ◽  
Shigeo Fujita
Keyword(s):  
Vapor Phase ◽  
Deep Level Transient Spectroscopy ◽  
Annealing Temperature ◽  
Deep Level ◽  
Defect States ◽  
Nitrogen Doped ◽  
Activation Efficiency ◽  
Transient Spectroscopy ◽  
P Type

AbstractConcentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy. Thermal annealing, which is a useful tool for realizing p-type conductivity, results in deep defect states which seem to be associated with Zn vacancies and with nitrogen acceptors. By lowering the annealing temperature, the trap concentrations can be successfully reduced without seriously sacrificing the acceptor activation efficiency, although further reduction of Zn vacancies is pointed out as a remaining requirement for the improvement of quality of MOVPE-grown p-type layers.

Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

1995 ◽  
Vol 411 ◽  
Author(s):  
T. D. Chen ◽  
J.-R. Lee ◽  
H. L. Tuller ◽  
Y.-M. Chiang
Keyword(s):  
Heat Treatment ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Leakage ◽  
Current Voltage ◽  
Transient Spectroscopy

ABSTRACTSimplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

scholarly journals Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

2016 ◽  
Vol 34 (4) ◽  
pp. 726-734 ◽  
Author(s):  
Łukasz Gelczuk ◽  
Maria Dąbrowska-Szata ◽  
Beata Ściana ◽  
Damian Pucicki ◽  
Damian Radziewicz ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Parameters ◽  
Native Defects ◽  
Three Samples ◽  
Nitrogen Concentrations ◽  
Defects And Impurities ◽  
Transient Spectroscopy

AbstractConventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

CW Laser Induced Deep Level Defects in Virgin Silicon.

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
High Temperature ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Solid Phase ◽  
Deep Level ◽  
Deep Levels ◽  
Cw Laser ◽  
Temperature State ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTDeep Level Transient Spectroscopy has been used to investigate cw laser induced defects in virgin silicon. Two main regimes have been found. In the solid phase regime, two well defined deep levels at Ec−0.19 eV and Ec−0.45 eV are observed. This point defect introduction is proposed to be involved in the degradation of ion-implanted cw laser annealed junctions. The mechanism leading to point defects generation is likely to involve trapping of in–diffused vacancies, quenched–in from the high temperature state. In the slip lines or melt regimes, additionnal deep levels are detected, which are ascribed to dislocations.

On the Origin of the New Electron Traps Induced By Rapid Thermal Annealing in GaAs Using Capping Proximity Technique.

1988 ◽  
Vol 144 ◽  
Author(s):  
G. Marrakchi ◽  
G. Chaussemy ◽  
A. Laugier ◽  
G. Guillot.
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Native Defect ◽  
Physical Origin ◽  
Electron Traps ◽  
Native Defects ◽  
Growth Method ◽  
Transient Spectroscopy

ABSTRACTRapid Thermal Annealing (RTA) effects on generation or annihilation of deep levels in GaAs have been investigated by Deep Level Transient Spectroscopy (DLTS). Capping proximity technique using three annealing configurations are employed to anneal Liquid Encapsulated Czochralski (LEC) and Bridgman (B) substrates, or Vapor Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) layers. The RTA treatment is performed from 800 to 950°C for two annealing times ( 3 and 10s).The DLTS data show that the evolution of the native defects depends on the GaAs growth method and also the annealing configuration. We observe the appearance of two new electron traps named RL1 and RL2 induced by the RTA process which depend on the kind of substrate: RL1 and RL2 are created in LEC material while only RL1 is detected in B material. A general comparison of our results with others reported in the literature show that these new electron traps are related to the change of stoichiometry at the GaAs surface and also depend on the existence of specific native defects in the starting GaAs material. It is proposed that the creation of RL1 is related to the EL6 native defect and discuss a possible physical origin for this level. We also propose that RL2 and EL5 originate from the same defect and suggest the divacancy VGaVAs as a possible origin for this trap.

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