Piezoelectric coefficient of thin films measured by piezoresponse force microscopy

2006 ◽  
Vol 383 (1) ◽  
pp. 31-32 ◽  
Author(s):  
S.-H. Lee ◽  
C.-H. Yang ◽  
Y.H. Jeong ◽  
N.O. Birge
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy

Effects of Thickness on the Responses of Piezoresponse Force Microscopy for Piezoelectric Film/Substrate Systems

2017 ◽  
Vol 84 (12) ◽  
Author(s):  
J. H. Wang ◽  
C. Q. Chen
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Empirical Formula ◽  
Piezoelectric Coefficient ◽  
Surface Displacement ◽  
Piezoresponse Force Microscopy ◽  
Thickness Effect ◽  
Image Charge ◽  
Force Microscopy ◽  
Semi Empirical

Piezoresponse force microscopy (PFM) extends the conventional nano-indentation technique and has become one of the most widely used methods to determine the properties of small scale piezoelectric materials. Its accuracy depends largely on whether a reliable analytical model for the corresponding properties is available. Based on the coupled theory and the image charge model, a rigorous analysis of the film thickness effects on the electromechanical behaviors of PFM for piezoelectric films is presented. When the film is very thick, analytical solutions for the surface displacement, electric potential, image charge, image charge distance, and effective piezoelectric coefficient are obtained. For the infinitely thin (IT) film case, the corresponding closed-form solutions are derived. When the film is of finite thickness, a single parameter semi-empirical formula agreeing well with the numerical results is proposed for the effective piezoelectric coefficient. It is found that if the film thickness effect is not taken into account, PFM can significantly underestimate the effective piezoelectric coefficient compared to the half space result. The effects of the ambient dielectric property on PFM responses are also explored. Humidity reduces the surface displacement, broadens the radial distribution peak, and greatly enlarges the image charge, resulting in reduced effective piezoelectric coefficient. The proposed semi-empirical formula is also suitable to describe the thickness effects on the effective piezoelectric coefficient of thin films in humid environment. The obtained results can be used to quantitatively interpret the PFM signals and enable the determination of intrinsic piezoelectric coefficient through PFM measurement for thin films.

scholarly journals Evidence of ferroelectric behaviour in CaCu3Ti4O12 thin films deposited by RF-sputtering

2019 ◽  
Vol 13 (3) ◽  
pp. 219-228 ◽  
Author(s):  
Cesar Foschini ◽  
Bruno Hangai ◽  
Paulo Ortega ◽  
Elson Longo ◽  
Mário Cilense ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Rf Sputtering ◽  
Piezoresponse Force Microscopy ◽  
Lattice Parameter ◽  
Space Charge Polarization ◽  
Secondary Phases ◽  
Force Microscopy ◽  
Conventional Furnace ◽  
Ferroelectric Behaviour

The origin of abnormal ferroelectric and unusual piezoelectricity in the polycrystalline CaCu3Ti4O12 (CCTO) thin films deposited by RF-sputtering on Pt/Ti/SiO2/Si (100) substrates was explored. The CCTO thin films, deposited at room temperature followed by annealing at 600?C for 2 h in a conventional furnace, have a cubic structure with lattice parameter a = 7.379 ? 0.001 ? and without any secondary phases. No polarization loss up to 1010 switching cycles, with a switched polarization ?P of 30 ?C/cm2 measured at 400 kV/cm was evidenced. The piezoelectric coefficient investigated by piezoresponse force microscopy (PFM) was approximately 9.0 pm/V. This may be the very first example of exploring the origin of ferroelectric behaviour for a material that possesses space charge polarization with highly resistive grain boundaries in the polycrystalline state.

Characterization of Nanomechanical, Ferroelectric, and Piezoelectric Properties by Nanoindentation and Piezoresponse Force Microscopy of PbTiO3 Thin Films

2013 ◽  
Vol 52 (40) ◽  
pp. 14328-14334 ◽  
Author(s):  
Juan Ramos-Cano ◽  
Mario Miki-Yoshida ◽  
André Marino Gonçalves ◽  
José Antônio Eiras ◽  
Jesús González-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Ferroelectric And Piezoelectric Properties

Three-dimensional ferroelectric domain imaging of epitaxial BiFeO3 thin films using angle-resolved piezoresponse force microscopy

2010 ◽  
Vol 97 (11) ◽  
pp. 112907 ◽  
Author(s):  
Moonkyu Park ◽  
Seungbum Hong ◽  
Jeffrey A. Klug ◽  
Michael J. Bedzyk ◽  
Orlando Auciello ◽  
...  
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Bifeo3 Thin Films

Piezoresponse Force Microscopy Studies of pc-BiFeO3 Thin Films Produced by the Simultaneous Laser Ablation of Bi and FeO3

2012 ◽  
Vol 1477 ◽  
Author(s):  
C. I. Enriquez-Flores ◽  
J. J. Gervacio-Arciniega ◽  
F. J. Flores-Ruiz ◽  
D. Cardona ◽  
E. Camps ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Domain Size ◽  
Piezoresponse Force Microscopy ◽  
Laser Deposition ◽  
Bismuth Iron Oxide ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Bifeo3 Thin Films ◽  
Ferroelectric Domains

ABSTRACTBismuth iron oxide BFO films were produced by the pulsed laser deposition technique. These films are a mixture of BiFeO3 ferroelectrical and Bi25FeO40 piezoelectrical phases. The ferroelectrical domain structure of these films was studied via contact resonance piezoresponse force microscopy (CR-PFM) and resonance tracking PFM (RT-PFM). The proportions of area of these BFO phases were derived from the PFM images. The ferroelectrical domain size corresponds to the size of the BiFeO3 crystals. The CR-PFM and RT-PFM techniques allowed us to be able to distinguish between the ferroelectric domains and the piezoelectric regions existing in the polycrystalline films.

scholarly journals The effect of substrate bias on the piezoelectric properties of pulse DC magnetron sputtered AlN thin films

2020 ◽  
Vol 31 (24) ◽  
pp. 22833-22843
Author(s):  
Nguyen Quoc Khánh ◽  
János Radó ◽  
Zsolt Endre Horváth ◽  
Saeedeh Soleimani ◽  
Binderiya Oyunbolor ◽  
...  
Keyword(s):  
Piezoelectric Coefficient ◽  
Piezoresponse Force Microscopy ◽  
Substrate Bias ◽  
Vibration Energy Harvesting ◽  
Force Microscopy ◽  
Ni Substrate ◽  
Substrate Heating ◽  
Positive Ions ◽  
Negative Substrate Bias

AbstractSubstrate bias was applied for AlN deposition on rolled Ni sheet during pulse DC reactive sputtering to overcome the difficulty caused by thermal expansion mismatch between Ni substrate and AlN upon substrate heating. It was shown by Piezoresponse Force Microscopy (PFM) that the quality of the deposited AlN layer depends strongly on the negative substrate bias, i.e., the energy transferred via the bombardment of the accelerated positive ions on the sample. As the negative substrate bias becomes larger, the so formed layer shows higher piezoresponse, and better homogeneity. A Z-cut LiNbO3 single crystal was used as a reference to correct the PFM signals. The highest average d33 piezoelectric coefficient value, achieved at − 100 V substrate bias, is 3.4 pm/V indicating the feasibility of AlN deposition on rolled Ni substrate for vibration energy harvesting applications.

Direct characterization of nanoscale domain switching and local piezoelectric loops of (Pb,La)TiO3 thin films by piezoresponse force microscopy

2005 ◽  
Vol 81 (6) ◽  
pp. 1207-1212 ◽  
Author(s):  
R. Poyato ◽  
M.L. Calzada ◽  
V.V. Shvartsman ◽  
A. Kholkin ◽  
P. Vilarinho ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy
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