Piezoresponse Force Microscopy Studies of pc-BiFeO3 Thin Films Produced by the Simultaneous Laser Ablation of Bi and FeO3

2012 ◽  
Vol 1477 ◽  
Author(s):  
C. I. Enriquez-Flores ◽  
J. J. Gervacio-Arciniega ◽  
F. J. Flores-Ruiz ◽  
D. Cardona ◽  
E. Camps ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Domain Size ◽  
Piezoresponse Force Microscopy ◽  
Laser Deposition ◽  
Bismuth Iron Oxide ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Bifeo3 Thin Films ◽  
Ferroelectric Domains

ABSTRACTBismuth iron oxide BFO films were produced by the pulsed laser deposition technique. These films are a mixture of BiFeO3 ferroelectrical and Bi25FeO40 piezoelectrical phases. The ferroelectrical domain structure of these films was studied via contact resonance piezoresponse force microscopy (CR-PFM) and resonance tracking PFM (RT-PFM). The proportions of area of these BFO phases were derived from the PFM images. The ferroelectrical domain size corresponds to the size of the BiFeO3 crystals. The CR-PFM and RT-PFM techniques allowed us to be able to distinguish between the ferroelectric domains and the piezoelectric regions existing in the polycrystalline films.

Local ferroelectric switching properties in BiFeO3 microstructures and their piezomagnetic response

2005 ◽  
Vol 902 ◽  
Author(s):  
Catalin Harnagea ◽  
Cristian Victor Cojocaru ◽  
Alain Pignolet
Keyword(s):  
Magnetoelectric Effect ◽  
Pulsed Laser ◽  
Piezoresponse Force Microscopy ◽  
Laser Deposition ◽  
Lateral Size ◽  
Magnetic Domains ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
First Results ◽  
Ferroelectric Switching

AbstractWe report here the successful fabrication of BiFeO3 (BFO) isolated micron-sized structures by pulsed laser deposition. The islands have a relatively constant aspect ratio (height/lateral size) of 0.1-0.3. We present their local ferroelectric characterization, using piezoresponse force microscopy (PFM), showing that the micron-sized BFO islands exhibit a strong piezoresponse and have ferroelectric domains with lateral sizes down to the 100 nm range. We also present here the first results of Magnetostriction Force Microscopy experiments performed on these structures. On ferromagnetic samples this method reveals a piezomagnetic or magnetostriction contrast, associated with magnetic domains. In our case, we show that the contrast can be associated to the magnetoelectric effect.

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

2014 ◽  
Vol 32 (4) ◽  
pp. 541-546 ◽  
Author(s):  
P. Nagaraju ◽  
Y. Vijayakumar ◽  
D. Phase ◽  
V. Reddy ◽  
M. Ramana Reddy
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Krf Excimer Laser

AbstractMicrostructural properties of Ce1-x GdxO2-δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

2010 ◽  
Vol 197 (1-3) ◽  
pp. 129-134 ◽  
Author(s):  
J. J. Dolo ◽  
H. C. Swart ◽  
E. Coetsee ◽  
J. J. Terblans ◽  
O. M. Ntwaeaborwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Luminescence Properties ◽  
Xps Analysis ◽  
Deposition Technique

Three-dimensional ferroelectric domain imaging of epitaxial BiFeO3 thin films using angle-resolved piezoresponse force microscopy

2010 ◽  
Vol 97 (11) ◽  
pp. 112907 ◽  
Author(s):  
Moonkyu Park ◽  
Seungbum Hong ◽  
Jeffrey A. Klug ◽  
Michael J. Bedzyk ◽  
Orlando Auciello ◽  
...  
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Bifeo3 Thin Films

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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