Effects of Thickness on the Responses of Piezoresponse Force Microscopy for Piezoelectric Film/Substrate Systems

2017 ◽  
Vol 84 (12) ◽  
Author(s):  
J. H. Wang ◽  
C. Q. Chen

Piezoresponse force microscopy (PFM) extends the conventional nano-indentation technique and has become one of the most widely used methods to determine the properties of small scale piezoelectric materials. Its accuracy depends largely on whether a reliable analytical model for the corresponding properties is available. Based on the coupled theory and the image charge model, a rigorous analysis of the film thickness effects on the electromechanical behaviors of PFM for piezoelectric films is presented. When the film is very thick, analytical solutions for the surface displacement, electric potential, image charge, image charge distance, and effective piezoelectric coefficient are obtained. For the infinitely thin (IT) film case, the corresponding closed-form solutions are derived. When the film is of finite thickness, a single parameter semi-empirical formula agreeing well with the numerical results is proposed for the effective piezoelectric coefficient. It is found that if the film thickness effect is not taken into account, PFM can significantly underestimate the effective piezoelectric coefficient compared to the half space result. The effects of the ambient dielectric property on PFM responses are also explored. Humidity reduces the surface displacement, broadens the radial distribution peak, and greatly enlarges the image charge, resulting in reduced effective piezoelectric coefficient. The proposed semi-empirical formula is also suitable to describe the thickness effects on the effective piezoelectric coefficient of thin films in humid environment. The obtained results can be used to quantitatively interpret the PFM signals and enable the determination of intrinsic piezoelectric coefficient through PFM measurement for thin films.

Author(s):  
J. H. Wang ◽  
C. Q. Chen

Based on the coupled theory, a simple explicit solution of piezoresponse force microscopy (PFM) in determining the effective piezoelectric coefficient for an ultra-thin transversely isotropic piezoelectric film bonded to a rigid conducting substrate is obtained, using the Taylor expansion and homogeneous assumption. And it is found to be exactly the same as the well-known result for the case of piezoelectric thin film clamped between flat rigid electrodes for homogeneous external electric field. The electric charge and the distance from the image charge model are also derived and the influences of the film thickness and substrate permittivity on the effective piezoelectric coefficient are then discussed. The obtained results can be used to quantitatively interpret the PFM signals and directly detect the piezoelectric constant through PFM for an ultra-thin film or supply important information for constructing a reliable formula to describe the thickness effect.


2011 ◽  
Vol 110 (10) ◽  
pp. 104101 ◽  
Author(s):  
A. Ferri ◽  
M. Detalle ◽  
J.-F. Blach ◽  
M. Warenghem ◽  
D. Rémiens ◽  
...  

2019 ◽  
Vol 13 (3) ◽  
pp. 219-228 ◽  
Author(s):  
Cesar Foschini ◽  
Bruno Hangai ◽  
Paulo Ortega ◽  
Elson Longo ◽  
Mário Cilense ◽  
...  

The origin of abnormal ferroelectric and unusual piezoelectricity in the polycrystalline CaCu3Ti4O12 (CCTO) thin films deposited by RF-sputtering on Pt/Ti/SiO2/Si (100) substrates was explored. The CCTO thin films, deposited at room temperature followed by annealing at 600?C for 2 h in a conventional furnace, have a cubic structure with lattice parameter a = 7.379 ? 0.001 ? and without any secondary phases. No polarization loss up to 1010 switching cycles, with a switched polarization ?P of 30 ?C/cm2 measured at 400 kV/cm was evidenced. The piezoelectric coefficient investigated by piezoresponse force microscopy (PFM) was approximately 9.0 pm/V. This may be the very first example of exploring the origin of ferroelectric behaviour for a material that possesses space charge polarization with highly resistive grain boundaries in the polycrystalline state.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.


2013 ◽  
Vol 52 (40) ◽  
pp. 14328-14334 ◽  
Author(s):  
Juan Ramos-Cano ◽  
Mario Miki-Yoshida ◽  
André Marino Gonçalves ◽  
José Antônio Eiras ◽  
Jesús González-Hernández ◽  
...  

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.


2010 ◽  
Vol 97 (11) ◽  
pp. 112907 ◽  
Author(s):  
Moonkyu Park ◽  
Seungbum Hong ◽  
Jeffrey A. Klug ◽  
Michael J. Bedzyk ◽  
Orlando Auciello ◽  
...  

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