Enhanced diffusion of oxygen in silicon due to resonant laser excitation of local vibrational mode

2006 ◽  
Vol 376-377 ◽  
pp. 66-68 ◽  
Author(s):  
H. Yamada-Kaneta ◽  
K. Tanahashi
2009 ◽  
Vol 404 (23-24) ◽  
pp. 4568-4571
Author(s):  
L.I. Murin ◽  
B.G. Svensson ◽  
J.L. Lindström ◽  
V.P. Markevich ◽  
C.A. Londos

1991 ◽  
Vol 69 (2) ◽  
pp. 971-974 ◽  
Author(s):  
J. Wagner ◽  
M. Maier ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
...  

2015 ◽  
Vol 62 ◽  
pp. 447-459
Author(s):  
Bruce A. Joyce

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.


2008 ◽  
Vol 77 (1) ◽  
Author(s):  
Andrew James Murray ◽  
William MacGillivray ◽  
Martyn Hussey

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