Stacking faults in silicon carbide

2003 ◽  
Vol 340-342 ◽  
pp. 165-170 ◽  
Author(s):  
H.P Iwata ◽  
U Lindefelt ◽  
S Öberg ◽  
P.R Briddon
Keyword(s):  
Silicon Carbide ◽  
Stacking Faults

Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions

2021 ◽  
Vol 129 (23) ◽  
pp. 235703
Author(s):  
Pei Li ◽  
Xiaolan Yan ◽  
Jiabin Chen ◽  
Peng Dong ◽  
Bing Huang
Keyword(s):  
Silicon Carbide ◽  
Stacking Faults

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

2020 ◽  
Vol 1004 ◽  
pp. 464-471
Author(s):  
Sarah Rugen ◽  
Siddarth Sundaresan ◽  
Ranbir Singh ◽  
Nando Kaminski
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Current Density ◽  
High Power ◽  
Stacking Faults ◽  
Bipolar Junction Transistors ◽  
Mode Operation ◽  
Different Temperatures ◽  
Current Densities ◽  
The Impact

Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.

scholarly journals 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3407 ◽  
Author(s):  
Massimo Zimbone ◽  
Marcin Zielinski ◽  
Corrado Bongiorno ◽  
Cristiano Calabretta ◽  
Ruggero Anzalone ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Growth Parameters ◽  
Stacking Faults ◽  
Phase Boundaries ◽  
Compliant Substrate ◽  
Patterned Substrate ◽  
Inverted Pyramid ◽  
Careful Control ◽  
Cubic Silicon Carbide

This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We investigated the effect of the size of the inverted pyramid on the epilayer quality. We noted that anti-phase boundaries (APBs) develop between adjacent faces of the pyramid and that the SiC/Si interfaces have the same polarity on both pyramid faces. The structure of the heterointerface was investigated. Moreover, due to the emergence of APB at the vertex of the pyramid, voids buried on the epilayer form. We demonstrated that careful control of the growth parameters allows modification of the height of the void and the density of APBs, improving SiC epitaxy quality.

Prediction of Stacking Faults in β-Silicon Carbide:  X-ray and NMR Studies

1997 ◽  
Vol 9 (3) ◽  
pp. 766-772 ◽  
Author(s):  
Hiroshi Tateyama ◽  
Hiroaki Noma ◽  
Yoshio Adachi ◽  
Masahiro Komatsu
Keyword(s):  
Silicon Carbide ◽  
Stacking Faults ◽  
Nmr Studies ◽  
X Ray

Simulation of Stacking Faults Effect on X-Ray Patterns of Silicon Carbide

1994 ◽  
Vol 166-169 ◽  
pp. 603-608 ◽  
Author(s):  
Bogdan F. Palosz ◽  
Svetlana Stelmakh ◽  
Stanislaw Gierlotka
Keyword(s):  
Silicon Carbide ◽  
Stacking Faults ◽  
X Ray ◽  
Ray Patterns

On the Nanostructure of SiC

2010 ◽  
Vol 12 ◽  
pp. 99-104
Author(s):  
Maya Marinova ◽  
Efstathios K. Polychroniadis
Keyword(s):  
Silicon Carbide ◽  
Liquid Phase ◽  
Structural Properties ◽  
Liquid Phase Epitaxy ◽  
Stacking Faults ◽  
Growth Conditions ◽  
Small Energy ◽  
Long Period ◽  
Stacking Order

The present work deals with the structural properties of silicon carbide in nanoscale dimensions. The examined crystals were 6H-SiC grown by Liquid Phase Epitaxy. The study was concentrated on the stacking faults and any other differences from the “correct” stacking order of the Si-C bilayers for this polytype. Three main types of stacking faults were observed: (i) Cubic lamellae with thickness of four and two Si-C bilayers, always occurring in reverse stacking with respect to each other and separated by at least one unit cell of 6H-SiC; (ii) “twinned” 6H-SiC lamellae separated by a two-bilayer thick cubic inclusion. As a result the sequence in the “twinned” 6H-SiC changes from (3+3-) to (3-3+). (iii) Lamellae showing fringes, the interrelated distance of which suggests inclusion with sequence (22). Further, a high variety of sequences was found, leading to the appearance of rare long period polytypes or individual lamellae having their “own” stacking inside the 6H-SiC matrix. These nanostructured faults which deteriorate the quality of the grown material indicate also their “sensitivity” to any small or even infinitesimal change of the growth conditions, due to the very small energy among them.

Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Localized electronic states around stacking faults in silicon carbide

2001 ◽  
Vol 65 (3) ◽  
Author(s):  
Hisaomi Iwata ◽  
Ulf Lindefelt ◽  
Sven Öberg ◽  
Patrick R. Briddon
Keyword(s):  
Silicon Carbide ◽  
Stacking Faults ◽  
Electronic States
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