Roughness distribution of multiple hit and long surface diffusion length noise reduced discrete growth models

2016 ◽  
Vol 462 ◽  
pp. 619-629 ◽  
Author(s):  
P. Disrattakit ◽  
R. Chanphana ◽  
P. Chatraphorn
Keyword(s):  
Surface Diffusion ◽  
Diffusion Length ◽  
Growth Models ◽  
Discrete Growth Models ◽  
Multiple Hit

Surface diffusion length of Ga adatoms on (1̄1̄1̄)B surfaces during molecular beam epitaxy

1994 ◽  
Vol 64 (9) ◽  
pp. 1123-1125 ◽  
Author(s):  
Y. Nomura ◽  
Y. Morishita ◽  
S. Goto ◽  
Y. Katayama ◽  
T. Isu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Diffusion ◽  
Molecular Beam ◽  
Diffusion Length

Some Comparisons of Ag Deposits on Ge and Si(111)

1992 ◽  
Vol 280 ◽  
Author(s):  
F. L. Metcalfe ◽  
J. A. Venables
Keyword(s):  
Crystal Growth ◽  
Surface Diffusion ◽  
Secondary Electron ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Rate Equations ◽  
Kinetic Rate ◽  
Annealing Conditions ◽  
Electron Imaging

ABSTRACTCrystal growth and surface diffusion have been studied in the Ag/Ge(lll) system using UHV-SEM based techniques, biassed secondary electron imaging (b-SEI), micro-AES and RHEED. Ag was deposited through and past a mask of holes held close to the substrate at 300<Td< 775K. Under certain conditions, the Ag patches were observed to split into two regions corresponding to the √3×√3R30° (hereafter √3) and a lower coverage 4×4 structure, each of which were easily observable using b-SEI. These patch widths were measured as a function of Td, and of annealing times at temperatures Ta, and effective diffusion coefficents extracted. The diffusion length of adatoms over the 4×4 structure is larger than that over the √3 structure. These observations are modelled using kinetic rate equations, and the results are compared with previous studies of Ag/Si(111). We find that energies characterising processes on top of the √3 layers of both systems are very similar, but that processes involved in the formation of the layers are quite different. The coverage of the √3 Ag/Ge(111) layer is close to 1 ML for all Td studied, unlike √3 Ag/Si(111). where it depends on deposition and annealing conditions.

Dynamic scaling behaviors of the discrete growth models on fractal substrates

2012 ◽  
Vol 2012 (10) ◽  
pp. P10014 ◽  
Author(s):  
Zhipeng Xun ◽  
Yongwei Zhang ◽  
Yan Li ◽  
Hui Xia ◽  
Dapeng Hao ◽  
...  
Keyword(s):  
Growth Models ◽  
Dynamic Scaling ◽  
Discrete Growth Models

Estimation of Surface Diffusion Length from AFM Images of Faceted GaAs(111) Homoepitaxial Films

1992 ◽  
Vol 280 ◽  
Author(s):  
K. Yang ◽  
L. J. Schowalter ◽  
T. G. Thundat
Keyword(s):  
Atomic Force Microscope ◽  
Surface Diffusion ◽  
Growth Condition ◽  
Diffusion Length ◽  
Vicinal Surfaces ◽  
Average Displacement ◽  
Atomic Force ◽  
Gaas Films

ABSTRACTGaAs films grown on exact (111) substrates in the reconstruction regime always show facets. We have studied the surfaces of these films with an atomic force microscope. The facets are composed of vicinal surfaces which are tilted by small angles (∼ 2°) from the exact (111) plane. From the geometry of the facet, average displacement of adatoms is calculated. The results indicate that the diffusion length under the growth condition is more than 0.2 μm.

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