Mound morphology of the 2+1 -dimensional Wolf–Villain model caused by the step-edge diffusion effect

2010 ◽  
Vol 389 (24) ◽  
pp. 5635-5644 ◽  
Author(s):  
Zhipeng Xun ◽  
Gang Tang ◽  
Kui Han ◽  
Hui Xia ◽  
Dapeng Hao ◽  
...  
Keyword(s):  
Step Edge ◽  
Diffusion Effect ◽  
Mound Morphology

Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition

2015 ◽  
Vol E98.C (2) ◽  
pp. 80-85
Author(s):  
Hiroshi YAMAUCHI ◽  
Shigekazu KUNIYOSHI ◽  
Masatoshi SAKAI ◽  
Kazuhiro KUDO
Keyword(s):  
Spray Deposition ◽  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN

2020 ◽  
Vol 60 (1) ◽  
pp. 018002
Author(s):  
Kazuhiro Mochizuki ◽  
Fumimasa Horikiri ◽  
Hiroshi Ohta ◽  
Tomoyoshi Mishima
Keyword(s):  
Step Edge ◽  
Step Velocity ◽  
Oxygen Concentrations

scholarly journals Scattering Mechanisms and Suppression of Bipolar Diffusion Effect in Bi2Te2.85Se0.15Ix Compounds

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1564
Author(s):  
Jin Hee Kim ◽  
Song Yi Back ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Lattice Distortion ◽  
Phonon Scattering ◽  
Iodine Concentration ◽  
Mean Free Path ◽  
Bandgap Energy ◽  
Diffusion Effect ◽  
Iodine Doping

We investigated the anisotropic thermoelectric properties of the Bi2Te2.85Se0.15Ix (x = 0.0, 0.1, 0.3, 0.5 mol.%) compounds, synthesized by ball-milling and hot-press sintering. The electrical conductivities of the Bi2Te2.85Se0.15Ix were significantly improved by the increase of carrier concentration. The dominant electronic scattering mechanism was changed from the mixed (T ≤ 400 K) and ionization scattering (T ≥ 420 K) for pristine compound (x = 0.0) to the acoustic phonon scattering by the iodine doping. The Hall mobility was also enhanced with the increasing carrier concentration. The enhancement of Hall mobility was caused by the increase of the mean free path of the carrier from 10.8 to 17.7 nm by iodine doping, which was attributed to the reduction of point defects without the meaningful change of bandgap energy. From the electron diffraction patterns, a lattice distortion was observed in the iodine doped compounds. The modulation vector due to lattice distortion increased with increasing iodine concentration, indicating the shorter range lattice distortion in real space for the higher iodine concentration. The bipolar thermal conductivity was suppressed, and the effective masses were increased by iodine doping. It suggests that the iodine doping minimizes the ionization scattering giving rise to the suppression of the bipolar diffusion effect, due to the prohibition of the BiTe1 antisite defect, and induces the lattice distortion which decreases lattice thermal conductivity, resulting in the enhancement of thermoelectric performance.

Analysis of Step Etching on SrTiO 3 Substrates for the Step-Edge YBCO Josephson Junctions

2000 ◽  
Vol 18 (1) ◽  
pp. 106-108 ◽  
Author(s):  
Chen Geng-Hua ◽  
Wang Jing ◽  
Zhao Shi-Ping ◽  
Han Bing ◽  
Xu Feng-Zhi ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Step Edge

Effects of d-wave symmetry in high Tc step-edge Josephson junctions

2000 ◽  
Vol 341-348 ◽  
pp. 1473-1474 ◽  
Author(s):  
Soon-Gul Lee ◽  
Yunseok Hwang ◽  
Jin-Tae Kim ◽  
Gun Yong Sung
Keyword(s):  
Josephson Junctions ◽  
Step Edge ◽  
High Tc ◽  
Wave Symmetry ◽  
D Wave
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