Electrical properties of C-doped p-type GaP and GaPN grown by molecular beam epitaxy

2010 ◽  
Vol 96 (3) ◽  
pp. 032106 ◽  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
P Type

The effect of low-temperature annealing on the electrical properties of the p-type cadmium–mercury–tellurium heterostructures grown by molecular beam epitaxy

2013 ◽  
Vol 56 (3) ◽  
pp. 313-318
Author(s):  
D. Yu. Protasov ◽  
А. R. Novoselov ◽  
D. V. Kombarov ◽  
V. Ya. Kostyuchenko ◽  
А. Е. Dolbak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Annealing ◽  
P Type

Properties of Modulation-Doped HgCdTe Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
Z. Yang ◽  
Y. Lansari ◽  
J.W. Han ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
P Type ◽  
Growth Experiments

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type
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