Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

Donghyun Kim; Jaewook Jeong; Hwarim Im; Sungmo Ahn; Heonsu Jeon; Changhee Lee; Yongtaek Hong

doi:10.1016/j.orgel.2011.07.019

Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

Organic Electronics ◽

10.1016/j.orgel.2011.07.019 ◽

2011 ◽

Vol 12 (11) ◽

pp. 1841-1845 ◽

Cited By ~ 6

Author(s):

Donghyun Kim ◽

Jaewook Jeong ◽

Hwarim Im ◽

Sungmo Ahn ◽

Heonsu Jeon ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Plasma Oxidation ◽

Organic Field Effect Transistors ◽

Channel Formation ◽

Gate Leakage Current ◽

Gate Leakage

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Electrically stable polymer-only dielectrics for organic field-effect transistors with low gate leakage current

Organic Electronics ◽

10.1016/j.orgel.2020.105828 ◽

2020 ◽

Vol 85 ◽

pp. 105828 ◽

Cited By ~ 1

Author(s):

Sooji Nam ◽

Yong Jin Jeong ◽

Jaeyoung Jang

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage

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Fabrication of Organic Field-Effect Transistors with Low Gate Leakage Current by a Functional Polydimethylsiloxane Layer

Applied Science and Convergence Technology ◽

10.5757/jkvs.2009.18.2.147 ◽

2009 ◽

Vol 18 (2) ◽

pp. 147-150 ◽

Cited By ~ 2

Author(s):

Sung-Jin Kim

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage

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Effects of interface states on submicron GaAs metal–semiconductor field-effect transistors assessed by gate leakage current

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588180 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1519 ◽

Cited By ~ 25

Author(s):

M. M. Ahmed

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Gate Leakage Current ◽

Gate Leakage

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Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Cited By ~ 12

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage

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Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Applied Physics Letters ◽

10.1063/1.1852089 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032103 ◽

Cited By ~ 38

Author(s):

R. W. I. de Boer ◽

N. N. Iosad ◽

A. F. Stassen ◽

T. M. Klapwijk ◽

A. F. Morpurgo

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Crystal Field Effect ◽

Organic Single Crystal ◽

The Stability

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Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2894 ◽

2002 ◽

Vol 41 (Part 1, No. 5A) ◽

pp. 2894-2899 ◽

Cited By ~ 8

Author(s):

Kyoung Jin Choi ◽

Jae Kyoung Moon ◽

Min Park ◽

Haechon Kim ◽

Jong-Lam Lee

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage

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Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors

Physical Chemistry Chemical Physics ◽

10.1039/c0cp01026j ◽

2011 ◽

Vol 13 (8) ◽

pp. 3461 ◽

Cited By ~ 8

Author(s):

Cui Yu ◽

Hongmei Liu ◽

Wenbin Ni ◽

Nengyue Gao ◽

Jianwei Zhao ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Theoretical Study ◽

Field Effect Transistors ◽

Drain Current ◽

Gate Leakage Current ◽

Gate Leakage

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Enhanced CAD model for gate leakage current in heterostructure field effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.502114 ◽

1996 ◽

Vol 43 (6) ◽

pp. 845-851 ◽

Cited By ~ 7

Author(s):

Kie Young Lee ◽

B. Lund ◽

T. Ytterdal ◽

P. Robertson ◽

E.J. Martinez ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Cad Model ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors

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Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

10.7567/ssdm.2004.g-4-3 ◽

2004 ◽

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

Toshiki Makimoto ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

High Transconductance

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Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2012.02.003 ◽

2012 ◽

Vol 52 (7) ◽

pp. 1323-1327 ◽

Cited By ~ 4

Author(s):

J. Kováč ◽

A. Šatka ◽

A. Chvála ◽

D. Donoval ◽

P. Kordoš ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors

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