scholarly journals Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

2005 ◽  
Vol 86 (3) ◽  
pp. 032103 ◽  
Author(s):  
R. W. I. de Boer ◽  
N. N. Iosad ◽  
A. F. Stassen ◽  
T. M. Klapwijk ◽  
A. F. Morpurgo
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
The Stability

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

scholarly journals Effects of Polarized Organosilane Self-Assembled Monolayers on Organic Single-Crystal Field-Effect Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
J. Takey ◽  
T. Nishikaw ◽  
T. Takenobu ◽  
H. Shimotani ◽  
S. Kobayashi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Self Assembled Monolayers ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Circuit Components

AbstractOrganosilane self-assembled monolayers, embedded in organic single-crystal field-effect transistors, significantly affect subthreshold properties in the transfer characteristics. The monolayer of either polarized or nearly unpolarized molecules is deposited on a SiO2/doped Si substrate before softly attaching a rubrene thin single crystal to form the “laminated crystal” transistors. As a result of effective passivation of the SiO2 surface, the device has achieved a subthreshold swing as low as 0.11 V/decade. It is also demonstrated that threshold gate voltage is shifted by polarization of the monolayers, indicating that threshold of the device is adjustable by the choice of silane materials. Both of the functions are closely associated with low-power applications such as logic-circuit components.

scholarly journals Correlation between the static and dynamic responses of organic single-crystal field-effect transistors

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Taiki Sawada ◽  
Akifumi Yamamura ◽  
Mari Sasaki ◽  
Kayo Takahira ◽  
Toshihiro Okamoto ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Circuit Model ◽  
Dynamic Responses ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Abstract Transistors, the most important logic elements, are maintained under dynamic influence during circuit operations. Practically, circuit design protocols and frequency responsibility should stem from a perfect agreement between the static and dynamic properties. However, despite remarkable improvements in mobility for organic semiconductors, the correlation between the device performances achieved under static and dynamic circumstances is controversial. Particularly in the case of organic semiconductors, it remains unclear whether parasitic elements that relate to their unique molecular aggregates may violate the radiofrequency circuit model. Thus, we herein report the manufacture of micrometre-scale transistor arrays composed of solution-processed organic semiconductors, which achieve near very high-frequency band operations. Systematic investigations into the device geometrical factors revealed that the radiofrequency circuit model established on a solid-state continuous medium is extendable to organic single-crystal field-effect transistors. The validity of this radiofrequency circuit model allows a reliable prediction of the performances of organic radiofrequency devices.

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