Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

J. Kováč; A. Šatka; A. Chvála; D. Donoval; P. Kordoš; S. Delage

doi:10.1016/j.microrel.2012.02.003

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2012.02.003 ◽

2012 ◽

Vol 52 (7) ◽

pp. 1323-1327 ◽

Cited By ~ 4

Author(s):

J. Kováč ◽

A. Šatka ◽

A. Chvála ◽

D. Donoval ◽

P. Kordoš ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors

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Enhanced CAD model for gate leakage current in heterostructure field effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.502114 ◽

1996 ◽

Vol 43 (6) ◽

pp. 845-851 ◽

Cited By ~ 7

Author(s):

Kie Young Lee ◽

B. Lund ◽

T. Ytterdal ◽

P. Robertson ◽

E.J. Martinez ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Cad Model ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors

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Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

10.7567/ssdm.2004.g-4-3 ◽

2004 ◽

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

Toshiki Makimoto ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

High Transconductance

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High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator

Applied Physics Letters ◽

10.1063/1.2012535 ◽

2005 ◽

Vol 87 (7) ◽

pp. 073504 ◽

Cited By ~ 22

Author(s):

Narihiko Maeda ◽

Chengxin Wang ◽

Takatomo Enoki ◽

Toshiki Makimoto ◽

Takehiko Tawara

Keyword(s):

Leakage Current ◽

Current Density ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Gate Insulator ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field-effect transistors

Microwave and Optical Technology Letters ◽

10.1002/(sici)1098-2760(19960220)11:3<125::aid-mop4>3.0.co;2-n ◽

1996 ◽

Vol 11 (3) ◽

pp. 125-128 ◽

Cited By ~ 3

Author(s):

U. Auer ◽

R. Reuter ◽

P. Ellrodt ◽

C. Heedt ◽

W. Prost ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

The Impact

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Al2O3/Si3N4Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure: Low Gate Leakage Current with High Transconductance

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2747 ◽

2005 ◽

Vol 44 (4B) ◽

pp. 2747-2750 ◽

Cited By ~ 7

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

Toshiki Makimoto ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

High Transconductance

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Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1319972 ◽

2000 ◽

Vol 88 (10) ◽

pp. 5951-5958 ◽

Cited By ~ 149

Author(s):

E. J. Miller ◽

X. Z. Dang ◽

E. T. Yu

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors

Seventh International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1995.522170 ◽

2002 ◽

Cited By ~ 2

Author(s):

U. Auer ◽

R. Reuter ◽

P. Ellrodt ◽

C. Heedt ◽

W. Prost ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

The Impact

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Effects of interface states on submicron GaAs metal–semiconductor field-effect transistors assessed by gate leakage current

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588180 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1519 ◽

Cited By ~ 25

Author(s):

M. M. Ahmed

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Gate Leakage Current ◽

Gate Leakage

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Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Cited By ~ 12

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage

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Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Applied Physics Letters ◽

10.1063/1.1852089 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032103 ◽

Cited By ~ 38

Author(s):

R. W. I. de Boer ◽

N. N. Iosad ◽

A. F. Stassen ◽

T. M. Klapwijk ◽

A. F. Morpurgo

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Crystal Field Effect ◽

Organic Single Crystal ◽

The Stability

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