Effect of solution aging on morphology and electrical characteristics of regioregular P3HT FETs fabricated by spin coating and spray coating

2011 ◽  
Vol 12 (11) ◽  
pp. 1768-1776 ◽  
Author(s):  
U. Bielecka ◽  
P. Lutsyk ◽  
K. Janus ◽  
J. Sworakowski ◽  
W. Bartkowiak
Polymers ◽  
2020 ◽  
Vol 12 (3) ◽  
pp. 565 ◽  
Author(s):  
Beata Jewłoszewicz ◽  
Krzysztof A. Bogdanowicz ◽  
Wojciech Przybył ◽  
Agnieszka Iwan ◽  
Ireneusz Plebankiewicz

Poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate) (PEDOT:PSS) water and toluene solutions were investigated in detail, taking into consideration their stability, wettability, transparency, and electrochemical properties, along with change polarity caused by dopant. As dopant, methanol, ethanol, and isopropanol were used with different dipole moments (1.70, 1.69, and 1.66 D) and dielectric constants (33.0, 24.5, and 18.0). Three techniques, i.e., spin coating, doctor blade coating, and spray coating, were employed to created PEDOT:PSS layers on glass, glass/indium tin oxide (ITO), and glass/fluorine-doped tin oxide (FTO) substrates with optimized technical parameters for each used equipment. All used PEDOT:PSS water and toluene solutions demonstrated good wetting properties with angles below 30° for all used surfaces. Values of the energy bandgap (Eg) of PEDOT:PSS investigated by cyclic voltammetry (CV) in solution showed increase energy Eg along with addition of alcohol to the mixture, and they were found in the range of 1.20 eV to 2.85 eV. The opposite tendency was found for the Eg value of the PEDOT:PSS layer created from water solution. The storage effect on PEDOT:PSS layers detected by CV affected only the lowest unoccupied molecular orbital (LUMO) level, thereby causing changes in the energy bandgap. Finally, simple devices were constructed and investigated by infrared (IR) thermographic camera to investigate the surface defects on the created PEDOT:PSS layers. Our study showed that a more stable PEDOT:PSS layer without pin-holes and defects can be obtained from water and toluene solutions with isopropanol via the spin coating technique with an optimal speed of 3000 rpm and time of 90 s.


1994 ◽  
Vol 349 ◽  
Author(s):  
H. Maleki ◽  
D. Ila ◽  
L. R. Holland ◽  
R. L. Zimmerman ◽  
G. M. Jenkins

ABSTRACTFlat glassy polymeric carbon samples were prepared from phenolic resin by three techniques: spray coating, spin coating and molding. Cured at 110°C-180°C and pyrolyzed in argon at 600°C or at 1000°C, samples then were studied by RBS for trace impurities, by ESCA for surface oxidation and contamination and by Raman microprobe of the top surface and perpendicular to that for preferred orientation of aromatic ribbons. An increase of 13% to 24% in the relative area under the corresponding Raman peaks indicates increased orientation of the ribbon-like aromatic molecules in the sprayed and spin coated samples as compared with the molded sample.


2021 ◽  
Author(s):  
Marcos Antonio Santana Andrade Junior ◽  
Hugo Leandro Sousa dos Santos ◽  
Mileny dos Santos Araujo ◽  
Arthur Corrado Salomão ◽  
Lucia Helena Mascaro

Chalcogenides-based thin film solar cells are great competitors to beat high efficiencies as silicone solar cells. The chalcogenides that have been commonly used as absorber materials are CIS, CIGS, and CZTS. They present some advantages of having a direct and tunable band gap, high absorption coefficient and respectable efficiency to cost ratio. Solution processable deposition approaches for the fabrication of solar cells attracts a great deal attention due to its lower capital cost of the manufacturing than the vacuum-based techniques. In this chapter, we detail the use of a low-cost method of deposition for the chalcogenide thin films by spin-coating and spray-coating, which is already widely employed in several fields of industries.


2018 ◽  
Vol 7 (3.18) ◽  
pp. 75
Author(s):  
Nur Tahirah Razali ◽  
Khairunisa Kamarudin ◽  
Shusei Inaba ◽  
Mahshuri Yusof ◽  
Yeng Weng Leong ◽  
...  

Over the past decade, organic solar cells (OSCs) have demonstrated their great potential for the low-cost mass production of renewable energy.  However, the conventional active layer deposition technique (spin-coating) is not suitable for mass production due to its incompatibility with the roll-to-roll process. Spray-coating is a promising candidate for in-line production of OSCs but parameters such as distance between the spray nozzle and substrate, applied pressure and number of sprays should be optimized to produce adequate film thickness and morphology. Here, we verified how these processing parameters influence the thin film properties and observed that film thickness increases with decreasing nozzle-substrate distance, increasing number of sprays or applied pressure. The processing parameters were adjusted to produce spray-coated films with similar properties to the spin-coated ones thus confirming that spray-coating could replace spin-coating for mass production of OSC devices.  


Polymer ◽  
2012 ◽  
Vol 53 (6) ◽  
pp. 1321-1327 ◽  
Author(s):  
Michael D. Dimitriou ◽  
Harihara S. Sundaram ◽  
Youngjin Cho ◽  
Marvin Y. Paik ◽  
Masakazu Kondo ◽  
...  

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 002153-002188
Author(s):  
Steven J. Adamson ◽  
James Klocke ◽  
Gareth De Sanctis

For many years, Front End of Line (FEOL) wafer fabrication, has used spin coating as the method of choice for photoresist application. Today, 3D packaging requires coatings applied to the non-active side of the wafer. Popular applications for back side coatings are, temporary adhesives to hold wafers to carriers during Through Silicon Via (TSV) fabrication, applying die / wafer bonding materials, and dielectric layers. Spin coating of wafers can be used to apply a number of materials for backside coatings. Although this application method is quite fast, it has a number of drawbacks which include high material waste and its limitation to low viscosity materials. Wafer Backside Coating (WBC) adhesives applied prior to dicing poses some unique challenges due to their filler loadings, and therefore the formulations can be limited by the spinning process. Today, most companies using spin coating to apply WBC materials have to lower the viscosity of the fluid with solvents, which creates other problems. Screen or stencil printing to apply WBC adhesives is a proven method and is currently in production at manufacturing sites. Screen printing gives good print uniformity, but requires a formulation that self-levels after printing. Stencil printing can be used with almost any formulation or filler loading, but is highly dependent on the tooling accuracy to maintain the coating thickness uniformity. Both methods are limited to coating thicknesses in the 25–100 micron range. There exists a need for a wafer coating methodology that can overcome the aforementioned restrictions. The ability to apply materials of varying rheologies, with low material waste and yet provide high quality, uniform coatings is required. This paper will review the current methods of applying WBC coatings. The authors will also present results from a newly developed spray coating process developed to process high viscosity fluids such as WBC coatings.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


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