New method of spin injection into organic semiconductors using spin filtering tunnel barriers

2011 ◽  
Vol 12 (7) ◽  
pp. 1275-1278 ◽  
Author(s):  
K.V. Raman ◽  
J. Chang ◽  
J.S. Moodera
Keyword(s):  
Organic Semiconductors ◽  
Spin Injection ◽  
New Method ◽  
Tunnel Barriers ◽  
Spin Filtering

scholarly journals Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
S. P. Dash ◽  
D. Goll ◽  
P. Kopold ◽  
H. D. Carstanjen
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Spin Injection ◽  
Schottky Contact ◽  
Tunnel Barrier ◽  
Si Substrate ◽  
High Crystalline Quality ◽  
Tunnel Barriers ◽  
Interface Structures

In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS). In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed. In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them. In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at .

scholarly journals Spin-injection device based on EuS magnetic tunnel barriers

2002 ◽  
Vol 81 (10) ◽  
pp. 1815-1817 ◽  
Author(s):  
A. T. Filip ◽  
P. LeClair ◽  
C. J. P. Smits ◽  
J. T. Kohlhepp ◽  
H. J. M. Swagten ◽  
...  
Keyword(s):  
Spin Injection ◽  
Injection Device ◽  
Tunnel Barriers

scholarly journals Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers

2007 ◽  
Vol 91 (12) ◽  
pp. 122107 ◽  
Author(s):  
A. V. Ramos ◽  
M.-J. Guittet ◽  
J.-B. Moussy ◽  
R. Mattana ◽  
C. Deranlot ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cobalt Ferrite ◽  
Tunnel Barriers ◽  
Spin Filtering

Ambipolar electrical spin injection and spin transport in organic semiconductors

2008 ◽  
Vol 103 (10) ◽  
pp. 103714 ◽  
Author(s):  
M. Yunus ◽  
P. P. Ruden ◽  
D. L. Smith
Keyword(s):  
Organic Semiconductors ◽  
Spin Transport ◽  
Spin Injection ◽  
Electrical Spin

Spin Diffusion in the Finite Magnetic Heterojunction

2017 ◽  
Vol 727 ◽  
pp. 410-414
Author(s):  
Yi Lin Mi
Keyword(s):  
Spin Polarization ◽  
Organic Semiconductors ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Great Influence ◽  
Injection Efficiency ◽  
Spintronic Devices ◽  
Ferromagnetic Electrodes ◽  
Spin Polarons ◽  
The Difference

Spin diffusion in the finite magnetic heterojunction was explored considering the spin dependent conductivity. In organic semiconductor spintronic devices, the up-spin and down-spin polarons have different density once spin injection happens from ferromagnetic electrodes into organic semiconductors. The difference results in the spin dependent conductivity. The calculations show that the spin injection efficiency is dependent on the spin dependent conductivity and the size of the layers. The spin dependent conductivity has great influence on the spin injection efficiency in the finite magnetic heterojunction, when the spin polarization of the organic semiconductors is moderate.

Sign in / Sign up

Export Citation Format

Share Document