Ambipolar electrical spin injection and spin transport in organic semiconductors

2008 ◽  
Vol 103 (10) ◽  
pp. 103714 ◽  
Author(s):  
M. Yunus ◽  
P. P. Ruden ◽  
D. L. Smith
Keyword(s):  
Organic Semiconductors ◽  
Spin Transport ◽  
Spin Injection ◽  
Electrical Spin

Spin Transport and Magneto-Resistance in Organic Semiconductors

2009 ◽  
Vol 1154 ◽  
Author(s):  
Mohammad Yunus ◽  
P. P. Ruden ◽  
Darryl L. Smith
Keyword(s):  
Organic Semiconductors ◽  
Diffusion Approximation ◽  
Carrier Transport ◽  
Spin Transport ◽  
Spin Injection ◽  
Carrier Injection ◽  
Drift Diffusion ◽  
Spin Currents ◽  
Magneto Resistance

AbstractCalculated results for spin injection, transport, and magneto-resistance (MR) in organic semiconductors sandwiched between two ferromagnetic contacts are presented. The carrier transport is modeled by spin dependent device equations in drift-diffusion approximation. In agreement with earlier results, spin injection from ferromagnetic contacts into organic semiconductors can be greatly enhanced if (spin-selective) tunneling is the limiting process for carrier injection. Modeling the tunnel processes with linear contact resistances yields spin currents and MR that tend to increase with increasing bias. We also explore the possibility of bias dependent contact resistances and show that this effect may limit MR to low bias.

scholarly journals Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

2007 ◽  
Vol 101 (8) ◽  
pp. 081716 ◽  
Author(s):  
S. A. Crooker ◽  
M. Furis ◽  
X. Lou ◽  
P. A. Crowell ◽  
D. L. Smith ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Gaas Devices ◽  
Electrical Spin

Model for Spin Injection into Conjugated Organic Semiconductors

2004 ◽  
Vol 825 ◽  
Author(s):  
P. Paul Ruden ◽  
Darryl L. Smith
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Spin Injection ◽  
Spin Current ◽  
Local Thermal Equilibrium ◽  
Tunnel Barrier ◽  
Device Structure ◽  
Metallic Contact ◽  
Effective Spin ◽  
Electrical Spin

AbstractWe present a theoretical model to describe electrical spin injection from a ferromagnetic metal contact into a conjugated organic semiconductor. To achieve significant spin current, the organic semiconductor must be driven far out of local thermal equilibrium by an electric current. Effective spin injection therefore requires that equilibration between the conjugated organic semiconductor and the metallic contact be suppressed by an energy barrier to injection that may be due either to a large Schottky barrier or to an insulating tunnel barrier. The results are compared with simulations for a silicon based device structure. Detection of the injected spin current in the organic semiconductor is also addressed.

Robust electrical spin injection into a semiconductor heterostructure

2000 ◽  
Vol 62 (12) ◽  
pp. 8180-8183 ◽  
Author(s):  
B. T. Jonker ◽  
Y. D. Park ◽  
B. R. Bennett ◽  
H. D. Cheong ◽  
G. Kioseoglou ◽  
...  
Keyword(s):  
Spin Injection ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

scholarly journals Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

2002 ◽  
Vol 81 (2) ◽  
pp. 265-267 ◽  
Author(s):  
V. F. Motsnyi ◽  
J. De Boeck ◽  
J. Das ◽  
W. Van Roy ◽  
G. Borghs ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

2002 ◽  
Vol 80 (7) ◽  
pp. 1240-1242 ◽  
Author(s):  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
G. Itskos ◽  
G. Kioseoglou ◽  
A. Petrou
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Magnetic Metal ◽  
Electrical Spin

scholarly journals Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

2011 ◽  
Vol 84 (16) ◽  
Author(s):  
Kun-Rok Jeon ◽  
Byoung-Chul Min ◽  
Young-Hun Jo ◽  
Hun-Sung Lee ◽  
Il-Jae Shin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Electrical Spin
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