Photoionization of a charged exciton in a GaAs/GaAlAs corrugated quantum well

2011 ◽  
Vol 284 (20) ◽  
pp. 4936-4940 ◽  
Author(s):  
A. Vanitha ◽  
A. John Peter ◽  
C.W. Lee
Keyword(s):  
Quantum Well ◽  
Charged Exciton

scholarly journals Negatively charged exciton X and donor bound exciton D0X in planar doped CdTe/Cdl-xZnxTe quantum well heterostructures

1993 ◽  
Vol 03 (C5) ◽  
pp. 95-98 ◽  
Author(s):  
K. KHENG ◽  
R. T. COX ◽  
M. MAMOR ◽  
K. SAMINADAYAR ◽  
S. TATARENKO
Keyword(s):  
Quantum Well ◽  
Charged Exciton

scholarly journals Femtosecond Dynamics of Neutral and Charged Exciton Absorption in Cd1-xMnxTe Quantum Well

2002 ◽  
Vol 102 (4-5) ◽  
pp. 679-686 ◽  
Author(s):  
P. Płochocka ◽  
P. Kossacki ◽  
W. Maślana ◽  
C. Radzewicz ◽  
J.A. Gaj ◽  
...  
Keyword(s):  
Quantum Well ◽  
Exciton Absorption ◽  
Femtosecond Dynamics ◽  
Charged Exciton

Stable charged exciton in a ZnO/(Zn,Mg)O quantum well at near room temperature

2020 ◽  
Vol 117 (3) ◽  
pp. 033102
Author(s):  
M. Muszyński ◽  
H. Teisseyre ◽  
K. Sobczak ◽  
J. Suffczyński
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Charged Exciton

Filling-factor dependence of the negatively-charged-exciton absorption in a CdTe quantum well

1997 ◽  
Vol 56 (20) ◽  
pp. R12787-R12790 ◽  
Author(s):  
S. Lovisa ◽  
R. T. Cox ◽  
N. Magnea ◽  
K. Saminadayar
Keyword(s):  
Quantum Well ◽  
Filling Factor ◽  
Exciton Absorption ◽  
Charged Exciton

Electron-concentration-dependent quantum-well luminescence: Evidence for a negatively charged exciton

1995 ◽  
Vol 51 (12) ◽  
pp. 7969-7972 ◽  
Author(s):  
H. Buhmann ◽  
L. Mansouri ◽  
J. Wang ◽  
P. H. Beton ◽  
N. Mori ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Concentration ◽  
Charged Exciton

Real-time observation of charged exciton drift in modulation-doped (Cd,Mn)Te quantum well

2005 ◽  
Vol 71 (12) ◽  
Author(s):  
Fumiyoshi Takano ◽  
Takashi Tokizaki ◽  
Hiro Akinaga ◽  
Shinji Kuroda ◽  
Kôki Takita
Keyword(s):  
Quantum Well ◽  
Real Time ◽  
Charged Exciton ◽  
Time Observation ◽  
Real Time Observation

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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