Stable charged exciton in a ZnO/(Zn,Mg)O quantum well at near room temperature

2020 ◽  
Vol 117 (3) ◽  
pp. 033102
Author(s):  
M. Muszyński ◽  
H. Teisseyre ◽  
K. Sobczak ◽  
J. Suffczyński
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Charged Exciton

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

1988 ◽  
Vol 64 (6) ◽  
pp. 2854-2860 ◽  
Author(s):  
D. C. Hall ◽  
D. G. Deppe ◽  
N. Holonyak ◽  
R. J. Matyi ◽  
H. Shichijo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Behavior ◽  
Room Temperature

Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature

2003 ◽  
Vol 20 (8) ◽  
pp. 1376-1378 ◽  
Author(s):  
Zhang Xiong ◽  
Li Ai-Zhen ◽  
Zheng Yan-Lan ◽  
Xu Gang-Yi ◽  
Qi Ming
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Well Lasers ◽  
Multi Quantum Well

scholarly journals Negatively charged exciton X and donor bound exciton D0X in planar doped CdTe/Cdl-xZnxTe quantum well heterostructures

1993 ◽  
Vol 03 (C5) ◽  
pp. 95-98 ◽  
Author(s):  
K. KHENG ◽  
R. T. COX ◽  
M. MAMOR ◽  
K. SAMINADAYAR ◽  
S. TATARENKO
Keyword(s):  
Quantum Well ◽  
Charged Exciton
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