Filling-factor dependence of the negatively-charged-exciton absorption in a CdTe quantum well

1997 ◽  
Vol 56 (20) ◽  
pp. R12787-R12790 ◽  
Author(s):  
S. Lovisa ◽  
R. T. Cox ◽  
N. Magnea ◽  
K. Saminadayar
Keyword(s):  
Quantum Well ◽  
Filling Factor ◽  
Exciton Absorption ◽  
Charged Exciton

scholarly journals Femtosecond Dynamics of Neutral and Charged Exciton Absorption in Cd1-xMnxTe Quantum Well

2002 ◽  
Vol 102 (4-5) ◽  
pp. 679-686 ◽  
Author(s):  
P. Płochocka ◽  
P. Kossacki ◽  
W. Maślana ◽  
C. Radzewicz ◽  
J.A. Gaj ◽  
...  
Keyword(s):  
Quantum Well ◽  
Exciton Absorption ◽  
Femtosecond Dynamics ◽  
Charged Exciton

scholarly journals Composite fermions in a wide quantum well in the vicinity of the filling factor 1/2

2019 ◽  
Vol 301 ◽  
pp. 113698
Author(s):  
I.L. Drichko ◽  
I. Yu Smirnov ◽  
A.V. Suslov ◽  
D. Kamburov ◽  
K.W. Baldwin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Filling Factor ◽  
Composite Fermions

scholarly journals Negatively charged exciton X and donor bound exciton D0X in planar doped CdTe/Cdl-xZnxTe quantum well heterostructures

1993 ◽  
Vol 03 (C5) ◽  
pp. 95-98 ◽  
Author(s):  
K. KHENG ◽  
R. T. COX ◽  
M. MAMOR ◽  
K. SAMINADAYAR ◽  
S. TATARENKO
Keyword(s):  
Quantum Well ◽  
Charged Exciton

Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures

1999 ◽  
Vol 14 (7) ◽  
pp. 2794-2798 ◽  
Author(s):  
W. Liu ◽  
M. F. Li ◽  
K. L. Teo ◽  
Nakao Akutsu ◽  
Koh Matsumoto
Keyword(s):  
Quantum Well ◽  
Absorption Edge ◽  
Room Temperature ◽  
Carrier Screening ◽  
Free Carrier ◽  
Exciton Absorption ◽  
Quantum Well Structures ◽  
Bulk Absorption ◽  
Lock In ◽  
Reference Phase

Room-temperature photovoltaic spectroscopy was applied to study undoped GaN, n-type GaN, and InGaN quantum well structures. Clear exciton absorption was observed in the photovoltaic spectra of the undoped GaN, and polarization measurements were made to identify the exciton absorption. For the n-type GaN sample, instead of the exciton absorption we observed only bulk absorption edge, which may be due to the free carrier screening effect. For the InGaN quantum well structures, the photovoltaic spectra showed relatively complicated line shape due to the overlap of the signals from different layers. By changing the reference phase of the lock-in amplifier, we were able to suppress some of the signals and thus identify the origin of the corresponding signal.

SPIN RESOLVED SUBBAND-LANDAU-LEVEL COUPLING AND ELECTRON-HOLE COUPLING IN InAs/AlGaSbAs QUANTUM WELL

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2905-2909
Author(s):  
TAKAHIDE YOSHIDA ◽  
KENICHI OTO ◽  
SHUICHI ISHIDA ◽  
HIROTAKA GEKA ◽  
ICHIRO SHIBASAKI
Keyword(s):  
Magnetic Fields ◽  
Quantum Well ◽  
Hall Effect ◽  
Transport Properties ◽  
Landau Level ◽  
Filling Factor ◽  
Lattice Mismatch ◽  
High Magnetic Fields ◽  
Electron Hole ◽  
Magneto Resistance

We have investigated the magneto-transport properties in InAs / AlGaSbAs quantum well (QW), where the lattice mismatch is less than 0.5%. In tilted magnetic fields, the spin-resolved subband-Landau-level coupling has been clearly observed in the magneto-resistance due to the large g -factor of this QW. An anomaly in the Hall effect has been observed at high magnetic fields of the filling factor being less than unity, which is caused by the coexistence of electrons and holes in the system.

Exciton absorption in quantum-well wires under the electric field

2003 ◽  
Vol 16 (2) ◽  
pp. 237-243 ◽  
Author(s):  
E. Kasapoglu ◽  
H. Sari ◽  
M. Bursal ◽  
I. Sökmen
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Exciton Absorption ◽  
Quantum Well Wires
Sign in / Sign up

Export Citation Format

Share Document