Ion irradiation effects on tungsten-oxide films and charge state effect on electronic erosion

2010 ◽  
Vol 268 (19) ◽  
pp. 3167-3170 ◽  
Author(s):  
N. Matsunami ◽  
M. Sataka ◽  
S. Okayasu ◽  
H. Kakiuchida
Keyword(s):  
Tungsten Oxide ◽  
Charge State ◽  
Ion Irradiation ◽  
Oxide Films ◽  
Irradiation Effects ◽  
State Effect

Ion irradiation effects in platinum oxide films

2003 ◽  
Vol 93 (11) ◽  
pp. 9030-9037 ◽  
Author(s):  
F. Machalett ◽  
K. Gärtner ◽  
K. Edinger ◽  
M. Diegel
Keyword(s):  
Ion Irradiation ◽  
Oxide Films ◽  
Platinum Oxide ◽  
Irradiation Effects

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

scholarly journals Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4169
Author(s):  
Gennady Gorokh ◽  
Natalia Bogomazova ◽  
Abdelhafed Taleb ◽  
Valery Zhylinski ◽  
Timur Galkovsky ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Gas Sensing ◽  
Oxide Films ◽  
High Sensitivity ◽  
Anodic Alumina ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Layer By Layer ◽  
Gas Sensitivity ◽  
Nanoporous Anodic Alumina

The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.

Gasochromic Properties of Nanostructured Tungsten Oxide Films Prepared by Sputtering Deposition

2007 ◽  
Vol 46 (9B) ◽  
pp. 6315-6318 ◽  
Author(s):  
Katsuyoshi Takano ◽  
Aichi Inouye ◽  
Shunya Yamamoto ◽  
Masaki Sugimoto ◽  
Masahito Yoshikawa ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Oxide Films ◽  
Sputtering Deposition

Heavy-ion irradiation effects in theABO4orthosilicates: Decomposition, amorphization, and recrystallization

1999 ◽  
Vol 59 (6) ◽  
pp. 3981-3992 ◽  
Author(s):  
A. Meldrum ◽  
S. J. Zinkle ◽  
L. A. Boatner ◽  
R. C. Ewing
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Heavy Ion Irradiation
Sign in / Sign up

Export Citation Format

Share Document