Ion irradiation effects in platinum oxide films

2003 ◽  
Vol 93 (11) ◽  
pp. 9030-9037 ◽  
Author(s):  
F. Machalett ◽  
K. Gärtner ◽  
K. Edinger ◽  
M. Diegel
Keyword(s):  
Ion Irradiation ◽  
Oxide Films ◽  
Platinum Oxide ◽  
Irradiation Effects

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

Heavy-ion irradiation effects in theABO4orthosilicates: Decomposition, amorphization, and recrystallization

1999 ◽  
Vol 59 (6) ◽  
pp. 3981-3992 ◽  
Author(s):  
A. Meldrum ◽  
S. J. Zinkle ◽  
L. A. Boatner ◽  
R. C. Ewing
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Heavy Ion Irradiation

ECR Plasma Oxidation: Dependence on Energy of Argon Ion

1999 ◽  
Vol 585 ◽  
Author(s):  
S. Matsuo ◽  
M. Yamamoto ◽  
T. Sadoh ◽  
T. Tsurushima ◽  
D. W. Gao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Flow Rate ◽  
Microwave Power ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Oxide Films ◽  
Ecr Plasma ◽  
Second Growth ◽  
Argon Ions ◽  
Argon Ion

AbstractEffects of ion-irradiation on oxidation of silicon at low temperatures (130°C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.

scholarly journals Self-ion irradiation effects on mechanical properties of nanocrystalline zirconium films

2017 ◽  
Vol 7 (3) ◽  
pp. 595-600 ◽  
Author(s):  
Baoming Wang ◽  
M. A. Haque ◽  
Vikas Tomar ◽  
Khalid Hattar
Keyword(s):  
Mechanical Properties ◽  
Ion Irradiation ◽  
Irradiation Effects ◽  
Image Position

Abstract

scholarly journals Ion irradiation effects on metallic nanocrystals

2007 ◽  
Vol 162 (7-8) ◽  
pp. 501-513 ◽  
Author(s):  
P. Kluth ◽  
B. Johannessen ◽  
R. Giulian ◽  
C. S. Schnohr ◽  
G. J. Foran ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Irradiation Effects
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