A 3.2-Gb/s serial link transmitter in 0.18μm CMOS technology for CMOS Monolithic Active Pixel Sensors application

2019 ◽  
Vol 924 ◽  
pp. 170-174 ◽  
Author(s):  
Quan Sun ◽  
Guangyu Zhang ◽  
Datao Gong ◽  
Binwei Deng ◽  
Wei Zhou ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Serial Link ◽  
Active Pixel ◽  
Pixel Sensors

Development of a serial link transmitter for monolithic active pixel sensors

2022 ◽  
Vol 17 (01) ◽  
pp. C01024
Author(s):  
W. Zhou ◽  
X. Niu ◽  
W. Han ◽  
X. Li ◽  
Q. Wang ◽  
...  
Keyword(s):  
Bit Error Rate ◽  
Power Supply ◽  
High Speed ◽  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Serial Link ◽  
Active Pixel ◽  
Pixel Sensors ◽  
And Performance ◽  
External Clock

Abstract In this paper, a 5-Gbps serial link transmitter has been designed for monolithic active pixel sensor. The serial link is designed in a commercial 130-nm CMOS technology with a power supply of 1.2 V. The transmitter consists of a 16b/20b encoder, a three-stage 20:1 serializer core, the CML driver with pre-emphasis function, and a high-speed receiver to deal with the external clock. The root mean square jitter of this serial link transmitter is 2.2 ps, indicating a bit error rate of 1 × 10−14. This paper will discuss the design and performance of this serial link transmitter.

scholarly journals Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

2014 ◽  
Vol 9 (05) ◽  
pp. C05064-C05064 ◽  
Author(s):  
A Miucci ◽  
L Gonella ◽  
T Hemperek ◽  
F Hügging ◽  
H Krüger ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors ◽  
Radiation Hard

Monolithic Active Pixel Sensors in a 130 nm Triple Well CMOS Technology

IFAE 2006 ◽  
2007 ◽  
pp. 349-352
Author(s):  
V. Re ◽  
C. Andreoli ◽  
M. Manghisoni ◽  
E. Pozzati ◽  
L. Ratti ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors

TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology

MRS Advances ◽  
2018 ◽  
Vol 3 (51) ◽  
pp. 3053-3059
Author(s):  
Tuan A. Bui ◽  
Geoffrey K. Reeves ◽  
Patrick W. Leech ◽  
Anthony S. Holland ◽  
Geoffrey Taylor
Keyword(s):  
High Voltage ◽  
Computer Aided Design ◽  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Readout Circuits ◽  
Active Pixel ◽  
Pixel Sensors ◽  
Tcad Simulation ◽  
Response Output ◽  
Aided Design

ABSTRACTA model of a High Voltage CMOS (HV-CMOS) Monolithic Active Pixel Sensor (MAPS) has been modelled using Technology Computer Aided Design (TCAD). The model has incorporated both the active region and the on-pixel readout circuits which were comprised of a source follower amplifier and an integrated charge amplifier. The simulation has examined the electrical characteristics and response output of a HV-CMOS MAPS sensor using typical dimensions, levels of doping in the structural layers and bias conditions for this sensor. The performance of two alternate designs of amplifier have been examined as a function of the operating parameters. The response of the sensor to the incidence of Minimum Ionizing Particles (MIPs) at different energies has been included in the model.

Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology

2005 ◽  
Vol 52 (5) ◽  
pp. 1887-1891 ◽  
Author(s):  
J.J. Velthuis ◽  
P.P. Allport ◽  
G. Casse ◽  
A. Evans ◽  
R. Turchetta ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors
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