Development of deep N-well monolithic active pixel sensors in a CMOS technology

2007 ◽  
Vol 572 (1) ◽  
pp. 277-280 ◽  
Author(s):  
S. Bettarini ◽  
A. Bardi ◽  
G. Batignani ◽  
F. Bosi ◽  
G. Calderini ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors

scholarly journals Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

2014 ◽  
Vol 9 (05) ◽  
pp. C05064-C05064 ◽  
Author(s):  
A Miucci ◽  
L Gonella ◽  
T Hemperek ◽  
F Hügging ◽  
H Krüger ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors ◽  
Radiation Hard

Monolithic Active Pixel Sensors in a 130 nm Triple Well CMOS Technology

IFAE 2006 ◽  
2007 ◽  
pp. 349-352
Author(s):  
V. Re ◽  
C. Andreoli ◽  
M. Manghisoni ◽  
E. Pozzati ◽  
L. Ratti ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors

TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology

MRS Advances ◽  
2018 ◽  
Vol 3 (51) ◽  
pp. 3053-3059
Author(s):  
Tuan A. Bui ◽  
Geoffrey K. Reeves ◽  
Patrick W. Leech ◽  
Anthony S. Holland ◽  
Geoffrey Taylor
Keyword(s):  
High Voltage ◽  
Computer Aided Design ◽  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Readout Circuits ◽  
Active Pixel ◽  
Pixel Sensors ◽  
Tcad Simulation ◽  
Response Output ◽  
Aided Design

ABSTRACTA model of a High Voltage CMOS (HV-CMOS) Monolithic Active Pixel Sensor (MAPS) has been modelled using Technology Computer Aided Design (TCAD). The model has incorporated both the active region and the on-pixel readout circuits which were comprised of a source follower amplifier and an integrated charge amplifier. The simulation has examined the electrical characteristics and response output of a HV-CMOS MAPS sensor using typical dimensions, levels of doping in the structural layers and bias conditions for this sensor. The performance of two alternate designs of amplifier have been examined as a function of the operating parameters. The response of the sensor to the incidence of Minimum Ionizing Particles (MIPs) at different energies has been included in the model.

Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology

2005 ◽  
Vol 52 (5) ◽  
pp. 1887-1891 ◽  
Author(s):  
J.J. Velthuis ◽  
P.P. Allport ◽  
G. Casse ◽  
A. Evans ◽  
R. Turchetta ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors

Depleted Monolithic Active Pixel Sensors (DMAPS) implemented in LF-150 nm CMOS technology

2015 ◽  
Vol 10 (03) ◽  
pp. C03047-C03047 ◽  
Author(s):  
T. Kishishita ◽  
T. Hemperek ◽  
H. Krüger ◽  
N. Wermes
Keyword(s):  
Cmos Technology ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors
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