Three-dimensional graphite electrodes in CVD single crystal diamond detectors: Charge collection dependence on impinging β-particles geometry

2015 ◽  
Vol 799 ◽  
pp. 10-16 ◽  
Author(s):  
G. Conte ◽  
P. Allegrini ◽  
M. Pacilli ◽  
S. Salvatori ◽  
T. Kononenko ◽  
...  
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Charge Collection ◽  
Graphite Electrodes ◽  
Single Crystal Diamond

scholarly journals Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

2012 ◽  
Vol 14 (5) ◽  
pp. 053011 ◽  
Author(s):  
F Picollo ◽  
D Gatto Monticone ◽  
P Olivero ◽  
B A Fairchild ◽  
S Rubanov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Electrical Characterization ◽  
Single Crystal Diamond

Single Crystal CVD Diamond Detectors: Position and Temporal Response Measurements using a Synchrotron Microbeam Probe

2007 ◽  
Vol 1039 ◽  
Author(s):  
John Morse ◽  
Murielle Salomé ◽  
Eleni Berdermann ◽  
Michal Pomorski ◽  
James Grant ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plate Thickness ◽  
Radiation Detectors ◽  
Heavy Ion ◽  
High Energy ◽  
Charge Collection ◽  
Heavy Ion Physics ◽  
X Ray ◽  
Single Crystal Diamond ◽  
Wide Range

AbstractUltrapure, homoeptaxially grown CVD single crystal diamond is a material with great potential for the fabrication of ionizing radiation detectors for high energy, heavy ion physics, and realtime dosimetry for radiotherapy. Only diamond has suitable transmission properties and can offer the required radiation hardness for synchrotron X-ray beam monitoring applications. We report on experiments made using a synchrotron X-ray microbeam probe to investigate the performance of single crystal diamonds operated as position sensitive, solid state ‘ionization chambers’. We show that for a wide range of electric fields >0.3Vµm−1, suitably prepared devices give excellent spatial response uniformity and time stability. With an applied field of 2Vµm−1 complete charge collection times are ∼1nsec for a diamond plate thickness of 100µm. Position sensitivity was obtained for an X-ray beam incident on the isolation gap between adjacent electrodes of a quadrant device: here, a crossover response region that results from charge carrier diffusion extends over ∼20µm. Using GHz bandwidth signal processing electronics, the signal charge collection process was measured with spatial and temporal resolutions of 1µm and <50ps.

Fabrication of hundreds of microns three-dimensional single crystal diamond channel along with high aspect ratio by two-step process

2019 ◽  
Vol 255 ◽  
pp. 126556
Author(s):  
Jiao Fu ◽  
Yanfeng Wang ◽  
Juan Wang ◽  
Zhangcheng Liu ◽  
Ruozheng Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Single Crystal ◽  
High Aspect Ratio ◽  
Three Dimensional ◽  
Step Process ◽  
Single Crystal Diamond

scholarly journals Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

2009 ◽  
Vol 18 (5-8) ◽  
pp. 870-876 ◽  
Author(s):  
P. Olivero ◽  
G. Amato ◽  
F. Bellotti ◽  
O. Budnyk ◽  
E. Colombo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Direct Fabrication ◽  
Single Crystal Diamond

scholarly journals Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3006
Author(s):  
Qiang Wei ◽  
Xiaofan Zhang ◽  
Fang Lin ◽  
Ruozheng Wang ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cross Sections ◽  
Microwave Plasma ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Epitaxial Lateral Overgrowth ◽  
Plasma Chemical Vapor Deposition ◽  
Lateral Overgrowth ◽  
Single Crystal Diamond

Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the epitaxial lateral overgrowth technique. Raman and SEM methods were applied to analyze both types of growth layer characterization. The hollowness of the microchannels was measured using an optical microscope. According to the findings, the epitaxial lateral overgrowth layer of the novel reverse-V-shaped trench produced improved SCD surface morphology and crystal quality.

Ion-Beam-Assisted Lift-Off Technique for Three-Dimensional Micromachining of Freestanding Single-Crystal Diamond

2005 ◽  
Vol 17 (20) ◽  
pp. 2427-2430 ◽  
Author(s):  
P. Olivero ◽  
S. Rubanov ◽  
P. Reichart ◽  
B. C. Gibson ◽  
S. T. Huntington ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Three Dimensional ◽  
Single Crystal Diamond ◽  
Lift Off

scholarly journals Characterization of three-dimensional microstructures in single-crystal diamond

2006 ◽  
Vol 15 (10) ◽  
pp. 1614-1621 ◽  
Author(s):  
P. Olivero ◽  
S. Rubanov ◽  
P. Reichart ◽  
B.C. Gibson ◽  
S.T. Huntington ◽  
...  
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Diamond

Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1099-1104 ◽  
Author(s):  
Z.C. Liu ◽  
F.N. Li ◽  
W. Wang ◽  
J.W. Zhang ◽  
F. Lin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Layer ◽  
Three Dimensional ◽  
Electrode Structure ◽  
Tungsten Electrodes ◽  
High Pressure High Temperature ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
New Type ◽  
Different Depths

AbstractThe performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-high-temperature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

Sign in / Sign up

Export Citation Format

Share Document