Wavelength prediction of laser incident on amorphous silicon detector by neural network

2011 ◽  
Vol 654 (1) ◽  
pp. 464-470 ◽  
Author(s):  
V. Esmaeili Sani ◽  
A. Moussavi-Zarandi ◽  
M. Kafaee
Keyword(s):  
Neural Network ◽  
Amorphous Silicon ◽  
Silicon Detector

Amorphous Silicon/Crystalline Silicon Heterojunctions in Nuclear Radiation Detector Fabrication

1998 ◽  
Vol 507 ◽  
Author(s):  
J.T. Walton ◽  
M. Amman ◽  
G. Conti ◽  
W.S. Hong ◽  
P.N. Luke ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Radiation Detector ◽  
Silicon Detector ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Crystal Silicon ◽  
Silicon Heterojunctions

ABSTRACTApplication of amorphous silicon/crystalline silicon heterojunctions formed by RF sputter deposition and plasma enhanced chemical vapor deposition to the fabrication of nuclear radiation detectors is described. The performance of these heterojunctions as blocking contacts on highresisitivity p-type and n-type single crystal silicon and on lithium-ion compensated silicon (Si(Li)), which are commonly used in silicon detector fabrication, is presented. It is shown that an aluminum/amorphous-silicon contact on Si(Li) x-ray detectors results in about a factor of two reduction in the background counts when compared to a normal gold barrier contact.

scholarly journals Material Parameters in a Thick Hydrogenated Amorphous Silicon Detector and their Effect on Signal Collection

1989 ◽  
Vol 149 ◽  
Author(s):  
S. Qureshi ◽  
V. Perez-Mendez ◽  
S. N. Kaplan ◽  
I. Fujieda ◽  
G. Cho
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Detector ◽  
Dangling Bond ◽  
Material Parameters ◽  
Bond Density ◽  
Transient Photoconductivity ◽  
Signal Collection ◽  
Hydrogenated Amorphous

ABSTRACTTransient photoconductivity and ESR measurements were done to relate the ionized dangling bond density and the spin density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (∼30–35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential.

Near Infrared Response of Amorphous Silicon Detector Grown with Microcompensated Absorber Layer

1999 ◽  
Vol 557 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
A. Nascetti ◽  
F. Palma ◽  
M. Tucci
Keyword(s):  
Amorphous Silicon ◽  
Communication Systems ◽  
Near Infrared ◽  
Silicon Detector ◽  
Optical Excitation ◽  
Absorber Layer ◽  
Trap States ◽  
Low Concentrations ◽  
Dopant Atoms ◽  
Device Operation

AbstractIn this work we demonstrate that radiation up to 2 μm induces photocurrent in a single junction amorphous silicon structure at room temperature. The absorber layer is a microcompensated film deposited using very low concentrations of dopant species. Device operation is based on optical excitation of thermal generated carriers from trap states toward valence and conduction band in the high electric field region of the structure. Transient and frequency response under different bias voltages and illuminations conditions are presented. The possibility to use the infrared sensor in low bit rate communication systems has been demostrated by including our detector in a front-end system and measuring its frequency responce.Quantum efficiency measurement have been reproduced with a numerical model, able to take into account sub-band gap absorption into single films. Model results indicate the presence of a large valence band tail and a high number of dangling bonds and shallow defects ascribed to the presence of dopant atoms.

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