The gain, photon detection efficiency and excess noise factor of multi-pixel Geiger-mode avalanche photodiodes

2006 ◽  
Vol 567 (1) ◽  
pp. 57-61 ◽  
Author(s):  
Y. Musienko ◽  
S. Reucroft ◽  
J. Swain
Keyword(s):  
Detection Efficiency ◽  
Avalanche Photodiodes ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Photon Detection ◽  
Geiger Mode ◽  
Photon Detection Efficiency

scholarly journals Excess Noise Factor in Avalanche Photodiodes with Dead Space Effect

2021 ◽  
Author(s):  
Vignesh Reddy Angadi
Keyword(s):  
Monte Carlo ◽  
User Interface ◽  
Graphical User Interface ◽  
Avalanche Photodiodes ◽  
Research Work ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Monte Carlo Calculations ◽  
Space Effect

Abstract This project aims to produce a graphical user interface (GUI) for MATLAB programs written by J.S.Marsland as part of his research into the excess noise factor in avalanche photodiodes (APDs). The GUI will be produced using the GUIDE package supplied with the MATLAB software combined with the MATLAB programs. The GUI will then be used to compare this research work with the research work of others e.g. the Monte Carlo calculations made by the research group at the French Aerospace Laboratory (ONERA). Comparison with other research work will require the digitization of some graphs published in academic journals.

Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes

2020 ◽  
Vol 92 (1) ◽  
pp. 10301
Author(s):  
Tat Lung Wesley Ooi ◽  
Pei Ling Cheang ◽  
Ah Heng You ◽  
Yee Kit Chan
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Monte Carlo Model ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
The Impact

In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact ionization coefficients, multiplication gain and excess noise factor for electron- and hole-initiated multiplication with a range of thin multiplication widths. The impact ionization coefficient for GaN is higher than that of Al0.45Ga0.55N. For GaN, electron dominates the impact ionization at high electric field while hole dominate at low electric field whereas Al0.45Ga0.55N has hole dominate the impact ionization at higher field while electron dominate the lower field. In GaN APDs, electron-initiated multiplication is leading the multiplication gain at thinner multiplication widths while hole-initiated multiplication leads for longer widths. However for Al0.45Ga0.55N APDs, hole-initiated multiplication leads the multiplication gain for all multiplication widths simulated. The excess noise of electron-initiated multiplication in GaN APDs increases as multiplication widths increases while the excess noise decreases as the multiplication widths increases for hole-initiated multiplication. As for Al0.45Ga0.55N APDs, the excess noise for hole-initiated multiplication increases when multiplication width increases while the electron-initiated multiplication increases with the same gradient at all multiplication widths.

Sign in / Sign up

Export Citation Format

Share Document