A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors

H. Yücel; Ö. Birgül; E. Uyar; Ş. Çubukçu

doi:10.1016/j.net.2018.12.024

A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors

Nuclear Engineering and Technology ◽

10.1016/j.net.2018.12.024 ◽

2019 ◽

Vol 51 (3) ◽

pp. 731-737 ◽

Cited By ~ 1

Author(s):

H. Yücel ◽

Ö. Birgül ◽

E. Uyar ◽

Ş. Çubukçu

Keyword(s):

Electron Mobility ◽

Transient Technique ◽

Novel Approach ◽

Voltage Transient ◽

Cdznte Detectors

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A study of electron swarms in nitrogen gas by the voltage transient technique

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/22/6/007 ◽

1989 ◽

Vol 22 (6) ◽

pp. 759-765 ◽

Cited By ~ 7

Author(s):

P H Purdie ◽

J Fletcher

Keyword(s):

Nitrogen Gas ◽

Transient Technique ◽

Voltage Transient

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Novel Approach to Surface Processing for Improving the Efficiency of CdZnTe Detectors

Journal of Electronic Materials ◽

10.1007/s11664-013-2698-5 ◽

2013 ◽

Vol 43 (8) ◽

pp. 2771-2777 ◽

Cited By ~ 23

Author(s):

A. Hossain ◽

A. E. Bolotnikov ◽

G. S. Camarda ◽

Y. Cui ◽

D. Jones ◽

...

Keyword(s):

Surface Processing ◽

Novel Approach ◽

Cdznte Detectors

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Measurement of Electron Mobility-Lifetime Product in 3-D Position-Sensitive CdZnTe Detectors Using the VAD_UMv2.2 Digital Readout System

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2018.2876021 ◽

2018 ◽

Vol 65 (11) ◽

pp. 2834-2837 ◽

Cited By ~ 1

Author(s):

Jiawei Xia ◽

Michael Streicher ◽

Yuefeng Zhu ◽

Zhong He

Keyword(s):

Electron Mobility ◽

Readout System ◽

Digital Readout ◽

Position Sensitive ◽

Cdznte Detectors

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Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3108755 ◽

2021 ◽

pp. 1-6

Author(s):

Shijie Pan ◽

Shiwei Feng ◽

Xuan Li ◽

Xiang Zheng ◽

Xiaozhuang Lu ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Transient Method ◽

Amplitude Analysis ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Voltage Transient

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Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac1563 ◽

2021 ◽

Author(s):

Shijie Pan ◽

Shiwei Feng ◽

Xuan Li ◽

Xiang Zheng ◽

Xiaozhuang Lu ◽

...

Keyword(s):

Gamma Irradiation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Transient Method ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Voltage Transient

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A New Voltage Transient Technique for Deep‐Level Studies in Depletion‐Mode Field‐Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838795 ◽

1998 ◽

Vol 145 (9) ◽

pp. 3258-3264 ◽

Cited By ~ 9

Author(s):

P. Kolev ◽

M. H. Deen ◽

T. Hardy ◽

R. Murowinski

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Transient Technique ◽

Mode Field ◽

Voltage Transient

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Characterization of large area devices by an improved constant capacitance voltage transient technique

Solar Cells ◽

10.1016/0379-6787(88)90088-9 ◽

1988 ◽

Vol 24 (3-4) ◽

pp. 363-369

Author(s):

Jeng-Jye Shiau ◽

Alen L. Fahrenbruch ◽

Richard H. Bube

Keyword(s):

Large Area ◽

Transient Technique ◽

Capacitance Voltage ◽

Voltage Transient

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The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

Semiconductor Science and Technology ◽

10.1088/0268-1242/8/3/020 ◽

1993 ◽

Vol 8 (3) ◽

pp. 415-422 ◽

Cited By ~ 53

Author(s):

E H Linfield ◽

G A C Jones ◽

D A Ritchie ◽

J H Thompson

Keyword(s):

Electron Mobility ◽

Ion Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Novel Approach

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Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4896593 ◽

2014 ◽

Vol 32 (6) ◽

pp. 061202 ◽

Cited By ~ 9

Author(s):

Ya-Hsi Hwang ◽

Tsung-Sheng Kang ◽

Fan Ren ◽

Stephen J. Pearton

Keyword(s):

Electron Mobility ◽

Heat Dissipation ◽

High Electron Mobility Transistors ◽

Active Area ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Novel Approach

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Characterisation of large area devices by an improved constant capacitance voltage transient technique

Microelectronics Journal ◽

10.1016/0026-2692(89)90011-6 ◽

1989 ◽

Vol 20 (3) ◽

pp. 49

Keyword(s):

Large Area ◽

Transient Technique ◽

Capacitance Voltage ◽

Voltage Transient

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