Etch damage evaluation on (Bi4−xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources

2006 ◽  
Vol 9 (6) ◽  
pp. 1108-1114 ◽  
Author(s):  
Jong-Gyu Kim ◽  
Gwan-Ha Kim ◽  
Kyoung-Tae Kim ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Damage Evaluation ◽  
Plasma Sources ◽  
Inductively Coupled

The effect of dielectric top lids on materials processing in a low frequency inductively coupled plasma (LF-ICP) reactor

2014 ◽  
Vol 32 ◽  
pp. 1460340
Author(s):  
J. W. M. Lim ◽  
C. S. Chan ◽  
L. Xu ◽  
S. Xu
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
High Vacuum ◽  
Low Frequency ◽  
Optical Emission ◽  
Good Alternative ◽  
Plasma Sources ◽  
Inductively Coupled ◽  
Glass Substrates

The advent of the plasma revolution began in the 1970's with the exploitation of plasma sources for anisotropic etching and processing of materials. In recent years, plasma processing has gained popularity, with research institutions adopting projects in the field and industries implementing dry processing in their production lines. The advantages of utilizing plasma sources would be uniform processing over a large exposed surface area, and the reduction of toxic emissions. This leads to reduced costs borne by manufacturers which could be passed down as consumer savings, and a reduction in negative environmental impacts. Yet, one constraint that plagues the industry would be the control of contaminants in a plasma reactor which becomes evident when reactions are conducted in a clean vacuum environment. In this work, amorphous silicon (a-Si) thin films were grown on glass substrates in a low frequency inductively coupled plasma (LF-ICP) reactor with a top lid made of quartz. Even though the chamber was kept at high vacuum (~10−4 Pa), it was evident through secondary ion mass spectroscopy (SIMS) and Fourier-transform infra-red spectroscopy (FTIR) that oxygen contaminants were present. With the aid of optical emission spectroscopy (OES) the contaminant species were identified. The design of the LF-ICP reactor was then modified to incorporate an Alumina ( Al2O3 ) lid. Results indicate that there were reduced amounts of contaminants present in the reactor, and that an added benefit of increased power transfer to the plasma, improving deposition rate of thin films was realized. The results of this study is conclusive in showing that Al2O3 is a good alternative as a top-lid of an LF-ICP reactor, and offers industries a solution in improving quality and rate of growth of thin films.

Etching mechanism of (Pb,Sr)TiO3 thin films for DRAM application using Cl2/Ar inductively coupled plasma

Vacuum ◽  
2004 ◽  
Vol 74 (3-4) ◽  
pp. 485-489 ◽  
Author(s):  
Gwan-Ha Kim ◽  
Kyoung-Tae Kim ◽  
Dong-Pyo Kim ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Etching Mechanism

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

2013 ◽  
Vol 113 (20) ◽  
pp. 203505 ◽  
Author(s):  
Y. N. Guo ◽  
D. Y. Wei ◽  
S. Q. Xiao ◽  
S. Y. Huang ◽  
H. P. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

2004 ◽  
Vol 71 (1) ◽  
pp. 54-62 ◽  
Author(s):  
A.M Efremov ◽  
Dong-Pyo Kim ◽  
Kyoung-Tae Kim ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled
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