Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

2004 ◽  
Vol 114-115 ◽  
pp. 390-396 ◽  
Author(s):  
P. Kohli ◽  
S. Chakravarthi ◽  
Amitabh Jain ◽  
H. Bu ◽  
M. Mehrotra ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Junction Formation

New Approaches for Characterization of Advanced Annealing Techniques for Ultra-Shallow Junction Formation

2008 ◽  
Author(s):  
Paul Timans ◽  
Yao Zhi Hu ◽  
Jeff Gelpey ◽  
Steve McCoy ◽  
Wilfried Lerch ◽  
...  
Keyword(s):  
Shallow Junction ◽  
New Approaches ◽  
Junction Formation

Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

2004 ◽  
Vol 96 (1) ◽  
pp. 919-921 ◽  
Author(s):  
Lin Shao ◽  
John Chen ◽  
Jianming Zhang ◽  
D. Tang ◽  
Sanjay Patel ◽  
...  
Keyword(s):  
Point Defect ◽  
Ion Beams ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Shallow junction formation by preamorphization with tin implantation

1986 ◽  
Vol 49 (10) ◽  
pp. 575-577 ◽  
Author(s):  
M. Delfino ◽  
D. K. Sadana ◽  
A. E. Morgan
Keyword(s):  
Shallow Junction ◽  
Junction Formation

Gas immersion laser doping (GILD) for ultra-shallow junction formation

2004 ◽  
Vol 453-454 ◽  
pp. 106-109 ◽  
Author(s):  
G. Kerrien ◽  
T. Sarnet ◽  
D. Débarre ◽  
J. Boulmer ◽  
M. Hernandez ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Laser Doping ◽  
Junction Formation

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

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