Modified Hurkx band-to-band-tunneling model for accurate and robust TCAD simulations

2020 ◽  
Vol 104 ◽  
pp. 113552 ◽  
Author(s):  
Hiu-Yung Wong ◽  
Denis Dolgos ◽  
Lee Smith ◽  
Rimvydas V. Mickevicius
Keyword(s):  
Tunneling Model ◽  
Band To Band Tunneling ◽  
Tcad Simulations

TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

2012 ◽  
Vol 98 ◽  
pp. 334-337 ◽  
Author(s):  
Arnab Biswas ◽  
Surya Shankar Dan ◽  
Cyrille Le Royer ◽  
Wladyslaw Grabinski ◽  
Adrian M. Ionescu
Keyword(s):  
Tunneling Model ◽  
Band To Band Tunneling ◽  
Non Local ◽  
Tcad Simulation

Analysis of Ge-Si Heterojunction Nanowire Tunnel FET: Impact of Tunneling Window of Band-to-Band Tunneling Model

2017 ◽  
Vol 164 (11) ◽  
pp. E3354-E3358 ◽  
Author(s):  
Erry Dwi Kurniawan ◽  
Shang-Yi Yang ◽  
Vasanthan Thirunavukkarasu ◽  
Yung-Chun Wu
Keyword(s):  
Tunneling Model ◽  
Tunnel Fet ◽  
Band To Band Tunneling

scholarly journals Performance Analysis of TFET and VDSTFET for Low Power Application using the Work Function Engineering

2021 ◽  
Vol 9 (VI) ◽  
pp. 2722-2727
Author(s):  
Vaibhav Gupta
Keyword(s):  
Work Function ◽  
Thermionic Emission ◽  
Transfer Characteristics ◽  
Band To Band Tunneling ◽  
Conducting Mechanism ◽  
Dual Source ◽  
Power Application ◽  
Carrier Transportation ◽  
Gate Region ◽  
Tcad Simulations

We report a design of TFET which is quite different from conventional TFET. The structure of VTFET is similar to MOSFET but the conducting mechanism is completely different. Vertical TFET is designed perpendicular to the horizontal plane. The switching and carrier transportation mechanism of VTFET is based on the mechanism of the band to band tunneling through a potential barrier and vertical TFET is based on tunneling perpendicular to the device rather than a mechanism like thermionic emission unlike in MOSFET. We have designed a model for the two-dimension structure of V-TFET which consists of the dual-source and single drain. The channel among the drain and gate region is extraordinarily thin. We have plotted the transfer characteristics of V-TFET according to device parameters using TCAD. The comparison of VTFET with DSVTFET is done by using Silvaco TCAD and the effect of source doping, and work function on transfer characteristics of the device is examined by using silvaco TCAD simulations. The proposed device produces a low-off current.

An analytic three-terminal band-to-band tunneling model on GIDL in MOSFET

2001 ◽  
Vol 48 (7) ◽  
pp. 1400-1405 ◽  
Author(s):  
Ja-Hao Chen ◽  
Shyh-Chyi Wong ◽  
Yeong-Her Wang
Keyword(s):  
Tunneling Model ◽  
Band To Band Tunneling ◽  
Terminal Band

scholarly journals An N-Channel Band-to-Band Tunneling Flash Memory Design Optimization

2020 ◽  
Vol 2 ◽  
pp. 140-145
Author(s):  
Wing-Kong Ng ◽  
Wing-Shan Tam ◽  
Chi-Wah Kok
Keyword(s):  
Design Optimization ◽  
Flash Memory ◽  
Memory Design ◽  
Band To Band Tunneling
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