Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit

2019 ◽  
Vol 100-101 ◽  
pp. 113454 ◽  
Author(s):  
C. Abbate ◽  
G. Busatto ◽  
A. Sanseverino ◽  
D. Tedesco ◽  
F. Velardi
Keyword(s):  
Short Circuit ◽  
Failure Mechanisms ◽  
Enhancement Mode

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

2018 ◽  
Vol 88-90 ◽  
pp. 677-683 ◽  
Author(s):  
C. Abbate ◽  
G. Busatto ◽  
A. Sanseverino ◽  
D. Tedesco ◽  
F. Velardi
Keyword(s):  
Failure Analysis ◽  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemt

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

2019 ◽  
Vol 55 (2) ◽  
pp. 1807-1816 ◽  
Author(s):  
He Li ◽  
Xiao Li ◽  
Xiaodan Wang ◽  
Xintong Lyu ◽  
Haiwei Cai ◽  
...  
Keyword(s):  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemts

Short Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison with SiC MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Jiahui Sun ◽  
Kailun Zhong ◽  
Zheyang Zheng ◽  
Gang Lyu ◽  
Kevin J. Chen
Keyword(s):  
Short Circuit ◽  
Failure Mechanisms

scholarly journals Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

2018 ◽  
Vol 57 (7) ◽  
pp. 074102 ◽  
Author(s):  
Masaki Namai ◽  
Junjie An ◽  
Hiroshi Yano ◽  
Noriyuki Iwamuro
Keyword(s):  
Short Circuit ◽  
Failure Mechanisms ◽  
Dc Bus ◽  
Bus Voltage

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

2017 ◽  
Vol 76-77 ◽  
pp. 314-320 ◽  
Author(s):  
C. Abbate ◽  
G. Busatto ◽  
A. Sanseverino ◽  
D. Tedesco ◽  
F. Velardi
Keyword(s):  
Experimental Study ◽  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemt
Sign in / Sign up

Export Citation Format

Share Document