Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

2017 ◽  
Vol 76-77 ◽  
pp. 314-320 ◽  
Author(s):  
C. Abbate ◽  
G. Busatto ◽  
A. Sanseverino ◽  
D. Tedesco ◽  
F. Velardi
Keyword(s):  
Experimental Study ◽  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemt

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

2018 ◽  
Vol 88-90 ◽  
pp. 677-683 ◽  
Author(s):  
C. Abbate ◽  
G. Busatto ◽  
A. Sanseverino ◽  
D. Tedesco ◽  
F. Velardi
Keyword(s):  
Failure Analysis ◽  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemt

Experimental Study on the Short-Circuit Failure Mechanism of Cumulative Discharge in Gas Discharge Tube

2020 ◽  
pp. 1-8
Author(s):  
Lingyun Cheng ◽  
Weijiang Chen ◽  
Nianwen Xiang ◽  
Kejie Li ◽  
Kai Bian ◽  
...  
Keyword(s):  
Experimental Study ◽  
Failure Mechanism ◽  
Discharge Tube ◽  
Short Circuit ◽  
Gas Discharge

scholarly journals The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 440
Author(s):  
Yanan Liang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Xuan Wang ◽  
Qian Chen ◽  
...  
Keyword(s):  
Low Voltage ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Track Length ◽  
Single Event ◽  
Single Event Effects ◽  
Heavy Ion Irradiation ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Tcad Simulation

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

2019 ◽  
Vol 55 (2) ◽  
pp. 1807-1816 ◽  
Author(s):  
He Li ◽  
Xiao Li ◽  
Xiaodan Wang ◽  
Xintong Lyu ◽  
Haiwei Cai ◽  
...  
Keyword(s):  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemts

Analytical Expression of Barrier Layer for Enhancement Mode AlGaN/GaN HEMT

2014 ◽  
pp. 175-177
Author(s):  
Apurba Chakraborty ◽  
Saptarshi Ghosh ◽  
Ankush Bag ◽  
Palash Das ◽  
Dhrubes Biswas
Keyword(s):  
Barrier Layer ◽  
Analytical Expression ◽  
Enhancement Mode ◽  
Gan Hemt

scholarly journals A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 353 ◽  
Author(s):  
Giovanni Crupi ◽  
Antonio Raffo ◽  
Valeria Vadalà ◽  
Giorgio Vannini ◽  
Alina Caddemi
Keyword(s):  
Short Circuit ◽  
Equivalent Circuit Model ◽  
Short Circuit Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
Device Performance ◽  
High Electron ◽  
Gan Hemt ◽  
Temperature Conditions ◽  
Conventional Instrumentation

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

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